TITLE

Supermode control in diffraction-coupled semiconductor laser arrays

AUTHOR(S)
Mehuys, D.; Mitsunaga, K.; Eng, L.; Marshall, W. K.; Yariv, A.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1165
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Supermode control is demonstrated theoretically and experimentally in diffraction-coupled semiconductor laser arrays. A linear theory is presented to determine the supermode threshold gain as a function of the coupling cavity length. By fabricating devices with different coupling cavity lengths, array operation in both the fundamental and highest order supermodes is achieved.
ACCESSION #
9828225

 

Related Articles

  • Phase effects in a semiconductor laser with diffraction extraction of radiation. Kaliteevskiı, M. A.; Portnoı, E. L.; Sokolovskiı, G. S. // Technical Physics Letters;Sep97, Vol. 23 Issue 9, p699 

    Phase effects arising in a semiconductor laser with diffraction extraction of radiation and a distributed Bragg reflector on the substrate side are taken into account exactly quantitatively and the possibilities of using these effects in lasers is analyzed. It is shown that the phase effects...

  • 10 GHz passively mode-locked external-cavity semiconductor laser with 1.4 W average output power. Aschwanden, A.; Lorenser, D.; Unold, H. J.; Paschotta, R.; Gini, E.; Keller, U. // Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p131102 

    We present a 10 GHz passively mode-locked vertical external-cavity surface-emitting semiconductor laser (VECSEL) with 1.4 W average output power in 6.1 ps pulses. The output features a very good pulse quality with a time–bandwidth product of 0.42 in a nearly diffraction-limited beam. This...

  • Optical and Holographic Characteristic of As-S-Se Thin Films. Petkov, K.; Vlaeva, I.; Tasseva, J.; Yovcheva, T.; Sainov, S. // AIP Conference Proceedings;1/21/2010, Vol. 1203 Issue 1, p650 

    The photo-induced changes in As-S-Se ternary glasses offer a possibility of using amorphous chalcogenide layers for high-density information storage, high-resolution display devices and fabrication of diffractive optical elements. In this paper we report results of the photo-induced changes in...

  • Superfocusing of mutimode semiconductor lasers and light-emitting diodes. Sokolovskii, G.; Dudelev, V.; Losev, S.; Deryagin, A.; Kuchinskii, V.; Sibbett, W.; Rafailov, E. // Technical Physics Letters;May2012, Vol. 38 Issue 5, p402 

    The problem of focusing multimode radiation of high-power semiconductor lasers and light-emitting diodes (LEDs) has been studied. In these sources, low spatial quality of the output beam determines theoretical limit of the focal spot size (one to two orders of magnitude exceeding the diffraction...

  • Mode Analysis of the Optical and the Microwave Waveguides Using Electromagnetic Energy Flow Lines. Davidović, Miloš D.; Davidović, Milena D. // Acta Physica Polonica, A.;Oct2009, Vol. 116 Issue 4, p672 

    To better elucidate the essential energy transmission mechanism in the most common, typical waveguides, the electromagnetic energy flow lines for a planar optical slab waveguide and a microwave rectangular waveguide are constructed. The obtained results supply more direct and transparent insight...

  • Four-wave mixing and direct terahertz emission with two-color semiconductor lasers. Hoffmann, S.; Hofmann, M.; Bründermann, E.; Havenith, M.; Matus, M.; Moloney, J.V.; Moskalenko, A.S.; Kira, M.; Koch, S.W.; Saito, S.; Sakai, K. // Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3585 

    We have observed four-wave mixing in a semiconductor laser configured to emit on two wavelengths simultaneously. The four-wave mixing sidebands exist up to 4 THz stemming from a modulation of the carrier plasma at the difference frequency of the two laser modes. In addition, we were able to...

  • Control of the molecular orientation of a 2,2′-bithiophene-9,9-dioctylfluorene copolymer by laser annealing and subsequent enhancement of the field effect transistor characteristics. Kubota, Korefumi; Kato, Takuji; Adachi, Chihaya // Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p073303 

    We controlled the orientation of a 2,2′-bithiophene-9,9-dioctylfluorene (F8T2) copolymer spin-coated film on a polycarbonate substrate using a laser-annealing technique and demonstrated an enhancement of the field-effect transistor characteristics. We used a semiconductor laser, having a...

  • Improving the modulation efficiency of high-power distributed Bragg reflector tapered diode lasers. Hasler, K.-H.; Sumpf, B.; Adamiec, P.; Fricke, J.; Wenzel, H.; Erbert, G.; Tränkle, G. // Applied Physics B: Lasers & Optics;Jan2011, Vol. 102 Issue 1, p43 

    Different measures to improve the modulation efficiency of a distributed Bragg reflector tapered diode laser emitting at 1060 nm were investigated. Due to the 6-mm long cavity, the device reached an output power of 10 W with a nearly diffraction-limited beam quality. The input currents to the...

  • Midinfrared, optically pumped, unstable resonator lasers. Ongstad, A. P.; Kaspi, R.; Dente, G. C.; Tilton, M. L.; Chavez, J. // Applied Physics Letters;5/7/2007, Vol. 90 Issue 19, p191107 

    The authors describe high-brightness, broad area midinfrared semiconductor lasers. These devices were fabricated in the authors’ laboratory using a commercial solid-source molecular beam epitaxial system. The laser structures incorporated 14 type-II quantum wells embedded in thick...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics