Second-harmonic generation at 421 nm using injection-locked GaAlAs laser array and KNbO3

Chun, M. K.; Goldberg, L.; Weller, J. F.
September 1988
Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1170
Academic Journal
Significant improvement in frequency doubling efficiency of a cw output of a GaAlAs laser diode is described. Up to 0.72 mW of 421 nm power was generated by illuminating a KNbO3 crystal with a 270 mW diffraction-limited beam generated by an externally injection-locked laser diode array, operating in a single-mode and single-far-field lobe.


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