TITLE

Precipitation of group V elements and Ge in SiO2 and their drift in a temperature gradient

AUTHOR(S)
Celler, G. K.; Trimble, L. E.; Sheng, T. T.; Kosinski, S. G.; West, K. W.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1178
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It is shown that P, Sb, and Ge ions implanted in SiO2 precipitate into spherical clusters of up to 1000 Å diameter when heat treated in an oxygen-free ambient. This behavior is similar to that reported earlier for As implants. The clusters can be detected directly by transmission electron microscopy, or inferred from the unidirectional drift of the doped zone in a temperature gradient. Boron, a representative of group III, is the only element among those tested that does not migrate in a ∇T, suggesting the absence of phase separation.
ACCESSION #
9828217

 

Related Articles

  • Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films. von Borany, J.; Grotzschel, R. // Applied Physics Letters;12/1/1997, Vol. 71 Issue 22, p3215 

    Examines the depth distribution of germanium (Ge) implanted into thermally grown SiO[sub 2] films. Discovery of the redistribution of the as-implanted Ge profile; Formation of the crystalline Ge nanoclusters; Discussion of the evolution of nanoclusters.

  • Diffusion of ion-implanted phosphorus within thermally grown SiO2 in O2 ambient. Yamaji, Tetsuo; Ichikawa, Fumio // Journal of Applied Physics;3/15/1986, Vol. 59 Issue 6, p1981 

    Presents a study which analyzed the behavior of ion-implanted phosphorus in silicon dioxide by secondary ion-mass spectrometry. Experiment; Results and discussion; Conclusion.

  • Formation of Photoluminescence Centers During Annealing of SiO[sub 2] Layers Implanted with Ge Ions. Kachurin, G. A.; Rebohle, L.; Tyschenko, I. E.; Volodin, V. A.; Voelskow, M.; Skorupa, W.; Froeb, H. // Semiconductors;Jan2000, Vol. 34 Issue 1, p21 

    Photoluminescence (PL), Raman scattering, and the Rutherford backscattering of α-particles were used to study the formation of the centers of radiative-recombination emission in the visible region of the spectrum on annealing of the SiO[sub 2] layers implanted with Ge ions. It was found that...

  • Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb[sup +] ions. Ignatova, V. A.; Lebedev, O. I.; Wätjen, U.; Van Vaeck, L.; Van Landuyt, J.; Gijbels, R.; Adams, F. // Journal of Applied Physics;10/15/2002, Vol. 92 Issue 8, p4336 

    Amorphous thin SiO[SUB2] layers of different thickness on a Si(111) substrate were implanted with 12 keV [SUP121]Sb[SUP+] ions at fluences between 1×10[SUP15]cm[SUP-2] and 5×10[SUP15]cm[SUP-2], followed by thermal annealing. Formation of nanocrystal precipitates was established by...

  • Formation and bleaching of strong ultraviolet absorption bands in germanium implanted synthetic.... Albert, J.; Hill, K.O. // Applied Physics Letters;1/13/1992, Vol. 60 Issue 2, p148 

    Describes the implantation of germanium ions in fused silica using ion beams. Increase of optical absorption with two absorption bands; Use of irradiation to bleach the ion-induced optical absorption; Effect of ion implantation on the refractive index of silica near the substrate surface.

  • Linear optical properties of Ge nanocrystals in silica. Dowd, Annette; Elliman, Robert G.; Luther-Davies, Barry // Applied Physics Letters;10/8/2001, Vol. 79 Issue 15, p2327 

    The absorption and extinction spectra of Ge nanocrystals in silica formed by ion implantation are studied using photothermal deflection and transmission spectroscopies. It is found that scattering makes a significant contribution to the extinction spectrum, damping the spectral features and...

  • Electroluminescence induced by Ge nanocrystals obtained by hot ion implantation into SiO2. Bregolin, F. L.; Behar, M.; Sias, U. S.; Reboh, S.; Lehmann, J.; Rebohle, L.; Skorupa, W. // Journal of Applied Physics;Nov2009, Vol. 106 Issue 10, p106103-1 

    Commonly, electroluminescence (EL) from Ge nanocrystals (Ge NCs) has been obtained by room temperature (RT) Ge implantation into a SiO2 matrix followed by a high temperature anneal. In the present work, we have used a novel experimental approach: we have performed the Ge implantation at high...

  • Laser produced streams of Ge ions accelerated and optimized in the electric fields for implantation into SiO2 substrates. Rosinski, M.; Giuffrida, L.; Parys, P.; Gasior, P.; Fazio, E.; Mezzasalma, A. M.; Torrisi, L.; Ando, L.; Wolowski, J. // Review of Scientific Instruments;Feb2012, Vol. 83 Issue 2, p02B305 

    Ge crystals were prepared by means of laser-induced ion implantation technique. A Nd:YAG pulsed laser (repetition rate: 10 Hz; pulse duration: 3.5 ns; pulse energy: ∼0.5 J) was used both as an ion source and to carry out the ablation processes. The optimization of the laser-generated ion...

  • The Effect of Implantation of P Ions on the Photoluminescence of Si Nanocrystals in SiO[sub 2] Layers. Kachurin, G. A.; Yanovskaya, S. G.; Tetelbaum, D. I.; Mikhaılov, A. N. // Semiconductors;Jun2003, Vol. 37 Issue 6, p713 

    The effects of implanting 10[SUP13]-10[SUP16]cm[SUP-2] P ions and subsequent annealing at 600-1100[SUP°]C on the photoluminescence of Si nanocrystals formed preliminarily in SiO[SUB2] layers were studied. Quenching of the 780-nm luminescence band related to nanocrystals was observed...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics