Real-time observations of hydrogen drift and diffusion in silicon

Seager, C. H.; Anderson, R. A.
September 1988
Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1181
Academic Journal
Real-time detection of hydrogen motion and bonding has been accomplished by capacitance voltage profiling of various Schottky and metal- insulator-semiconductor capacitors during low-energy H ion beam injection into the barrier metallization. Finite element analysis modeling of the data indicates that a significant fraction of H interstitials are positively charged, and that bonding of these species with charged boron acceptors proceeds with the large cross section expected of a Coulomb capture process. The 300 K value of the H diffusivity is [bar_over_tilde:_approx._equal_to]10-10 cm2/s in agreement with extrapolation of high-temperature diffusivity data.


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