Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy

Williams, G. M.; Whitehouse, C. R.; McConville, C. F.; Cullis, A. G.; Ashley, T.; Courtney, S. J.; Elliott, C. T.
September 1988
Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1189
Academic Journal
Molecular beam epitaxy has been used to grow thin (0.5 μm


Related Articles

  • Molecular beam epitaxial growth and characterization of InSb on Si. Chyi, J.-I.; Biswas, D.; Iyer, S. V.; Kumar, N. S.; Morkoç, H.; Bean, R.; Zanio, K.; Lee, H.-Y.; Chen, Haydn // Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p1016 

    Epitaxial layers of InSb have been grown on Si substrates by molecular beam epitaxy. Room-temperature electron mobilities are 48 000 and 39 000 cm2/V s for 3.2 μm-thick InSb with and without a thin GaAs buffer, respectively. The corresponding carrier concentrations are 2.2×1016 and...

  • Molecular-beam epitaxy of (100) InSb for CdTe/InSb device applications. Williams, G. M.; Whitehouse, C. R.; Martin, T.; Chew, N. G.; Cullis, A. G.; Ashley, T.; Sykes, D. E.; Mackey, K.; Williams, R. H. // Journal of Applied Physics;3/1/1988, Vol. 63 Issue 5, p1526 

    Presents a study which examined the molecular-beam epitaxy of (100) indium antimonide for the fabrication of cadium telleride/indium antimonide multilayer structures. Experimental details; Experimental results; Details of cross-sectional transmission analysis.

  • Two-dimensional growth of InSb thin films on GaAs(111)A substrates. Kanisawa, K.; Yamaguchi, H.; Hirayama, Y. // Applied Physics Letters;1/31/2000, Vol. 76 Issue 5, p589 

    Heteroepitaxy of high-quality InSb films was performed directly on GaAs surfaces by using molecular beam epitaxy. Despite the 14.6% lattice mismatch, two-dimensionally grown InSb on GaAs(111)A substrates were obtained from the initial stage, but not on (001) substrates. A conductive layer was...

  • Structure of CdTe-Cd1-xMnxTe multiple quantum wells grown on (001) InSb substrates by molecular beam epitaxy. Williams, G. M.; Cullis, A. G.; Whitehouse, C. R.; Ashenford, D. E.; Lunn, B. // Applied Physics Letters;9/25/1989, Vol. 55 Issue 13, p1303 

    Molecular beam epitaxy has been used to prepare multiple quantum well structures of CdTe/Cd1-xMnxTe on (001) InSb substrates. The growth of such a system on InSb allows the use of particularly low growth temperatures, hence minimizing interdiffusion effects. This study presents the first...

  • Molecular beam epitaxial growth of high quality InSb. Michel, E.; Singh, G.; Sivken, S.; Besikci, C.; Bove, P.; Ferguson, I.; Razeghi, M. // Applied Physics Letters;12/26/1994, Vol. 65 Issue 26, p3338 

    Examines the growth of indium antimonide (InSb) by molecular beam epitaxy. Optimization of InSb by reflection high energy electron diffraction; Use of InSb for large area detector arrays; Application of InSb in magnetoresistive sensors.

  • MBE growth of indium antimonide reduces cost of infrared arrays.  // Laser Focus World;Jul96, Vol. 32 Issue 7, p13 

    Reports that scientists at the Center for Quantum Devices at Northwestern University have demonstrated 3- to 5-micrometer focal-plane 256 by 256-pixel array imaging using indium antimonide (InSb) grown on a gallium arsenide (GaAs) substrate. Advantage of growing the material on GaAs wafers by...

  • The Role of Anti-Phase Domains in InSb-Based Structures Grown on On-Axis and Off-Axis Ge Substrates. Debnath, M. C.; Mishima, T. D.; Santos, M. B.; Hossain, K.; Holland, O. W. // AIP Conference Proceedings;12/28/2011, Vol. 1416 Issue 1, p146 

    Anti-phase domains form in InSb epilayers and InSb/Al0.20In0.80Sb single quantum wells when grown upon on-axis (001) Ge substrates by molecular beam epitaxy. Domain formation is partially suppressed through growth on Ge substrates with surfaces that are several degrees off the (001) or (211)...

  • Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy. D'Costa, Vijay Richard; Kian Hua Tan; Bo Wen Jia; Soon Fatt Yoon; Yee-Chia Yeo // Journal of Applied Physics;6/14/2015, Vol. 117 Issue 22, p223106-1 

    Spectroscopic ellipsometry was used to investigate the optical properties of an InSb film grown on a GaAs (100) substrate, and to compare the optical properties of InSb film with those of bulk InSb. The film was grown by molecular beam epitaxy under conditions intended to form 90° misfit...

  • Spectral dependence of external reflection switching from indium antimonide. Feng, S.; Irene, E.A. // Applied Physics Letters;2/4/1991, Vol. 58 Issue 5, p455 

    Studies spectral dependence of external reflection switching from indium antimonide. Pulse carbon dioxide laser switching; Polarity of the switched out signal and the probe beam; Optical logic elements.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics