Physical parameters of GaInAs/Si3N4 interface states obtained by the conductance method

Barrier, Joël; Boher, Pierre; Renaud, Monique
September 1988
Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1192
Academic Journal
Interface state parameters were studied in TiAu/Si3N4/Ga0.47In0.53As metal-insulator-semiconductor capacitors by conductance and capacitance measurements at various temperatures. The analysis of the data, taking into account the variation of the capture cross section versus energy, allows us to obtain the density of states, the capture cross section, the surface potential, and the dispersion parameter. The numerical values agree very well with results provided by capacitance transient methods at low temperatures (isothermal capacitance transient spectroscopy and deep level transient spectroscopy).


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