Photobias effect in laser-controlled etching of InP

Willner, A. E.; Podlesnik, D. V.; Gilgen, H. H.; Osgood, R. M.
September 1988
Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1198
Academic Journal
We have investigated laser-assisted photochemical etching of InP in aqueous solutions without external electric fields. The process produces highly directional, high-aspect features with smooth vertical walls. Additionally, we demonstrate that the laser etching rate may be controlled externally by the application of a secondary light source.


Related Articles

  • Reactive chemical beam etching of InP inside a chemical beam epitaxial growth chamber using.... Tsang, W.T.; Kapre, R.; Sciortino Jr., P.F. // Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2084 

    Investigates InP reactive chemical beam etching through the use of phosphorus trichloride. Demonstration of reactive chemical beam etching; Improvement of surface morphology; Accomplishment of growth by gas switching with a second interruption.

  • Passivation of acceptors in InP resulting from CH4/H2 reactive ion etching. Hayes, T. R.; Dautremont-Smith, W. C.; Luftman, H. S.; Lee, J. W. // Applied Physics Letters;7/3/1989, Vol. 55 Issue 1, p56 

    Reactive ion etching of InP with CH4/H2 mixtures leads to hydrogen passivation of near-surface Zn acceptors but not S donors. Secondary-ion mass spectrometry (SIMS) measurements of CH4/D2 etched samples show deuterium diffuses to a depth of 2000 Å in p-InP (1.5×1018 cm-3) when etching at...

  • Determination of defect density in ZnCdMgSe layers grown on InP using chemical etch. Zeng, L.; Yang, B.X.; Shewareged, B.; Tamargo, M. C.; Wan, J. Z.; Pollak, Fred H.; Snoeks, E.; Zhao, L. // Journal of Applied Physics;10/1/1997, Vol. 82 Issue 7, p3306 

    Discusses the characterization of ZnCdMgSe epitaxial layers grown on indium phosphide substrates. Measurements of etch pit density; Characterization of the morphology of the etched surface using atomic force microscopy; Accuracy of the etch pit density method for revealing stacking faults and...

  • Uniformity and physical properties of semi-insulating Fe-doped InP after wafer or ingot annealing. Avella, M.; Jiménez, J.; Alvarez, A.; Fornari, R.; Gilioli, E.; Sentiri, A. // Journal of Applied Physics;10/15/1997, Vol. 82 Issue 8, p3836 

    Highlights the physical and structural properties of wafer-annealed Fe-doped InP. Effects of ingot annealing; Structural and electrical properties; Electrical properties of wafer cut from the annealed InP blocks; Electrical properties of the annealed blocks.

  • Revealing of defects in InP by shallow (submicron) photoetching. Weyher, J. L.; Giling, L. J. // Journal of Applied Physics;7/1/1985, Vol. 58 Issue 1, p219 

    Presents a study that investigated the defects in indium phosphide (InP) samples photoetched in several solutions. Determination of the etch rates of InP; Comparison of the etched rates of InP and gallium arsenide; Analysis of the etch patterns on InP after shallow photoetching.

  • Excimer laser induced etching of InP. Donnelly, V. M.; Hayes, T. R. // Applied Physics Letters;8/13/1990, Vol. 57 Issue 7, p701 

    We report 193 nm ArF excimer laser induced etching of InP in Cl2. Etching occurs by desorption of an In-chloride layer, as evidenced by an etch rate which increases linearly with laser repetition rate and is nearly pressure independent between 2 and 50 mTorr Cl2. At substrate temperatures near...

  • Reactive ion etching of zinc doped InP using methane and hydrogen: Assessment of the degree and extent of changes in surface carrier concentration. Singh, Jaspal // Journal of Applied Physics;11/15/1990, Vol. 68 Issue 10, p5383 

    Focuses on a study which assessed the reactive ion etching of zinc doped indium phosphide using methane and hydrogen. Reasons for choosing zinc doped indium phosphide; Dependence of the passivation depth on etching time; Effect of passivation on the characteristics of semiconductor lasers.

  • Electric-field induced excitons in an AlInAs/InP type-II superlattice. Kobayashi, Hideki; Kawamura, Yuichi; Mogi, Kazuo; Iwamura, Hidetoshi // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p5916 

    Investigates the electric-field excitons in an AlInAs/indium phosphide type-II superlattice. Experiments conducted; Experimental results; Conclusions.

  • Surface Grating Fabrication by Inductively Coupled Plasma Dry Etching for InP‐Based Photonic Integrated Circuits (Phys. Status Solidi A 18∕2018). Zhang, Juan; Sun, Changzheng; Xiong, Bing; Zheng, Yanzhen; Wang, Jian; Hao, Zhibiao; Wang, Lai; Han, Yanjun; Li, Hongtao; Luo, Yi; Xiao, Yi; Yu, Chuanqing; Tanemura, Takuo; Nakano, Yoshiaki // Physica Status Solidi. A: Applications & Materials Science;9/19/2018, Vol. 215 Issue 18, p1 

    No abstract available.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics