Strain and misorientation in GaAs grown on Si(001) by organometallic epitaxy

Ghandhi, S. K.; Ayers, J. E.
September 1988
Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1204
Academic Journal
Epitaxial GaAs grown on Si(001) by organometallic vapor phase epitaxy has been characterized for strain and misorientation, using double-crystal x-ray diffraction. (004) and (115) rocking curves indicate that the GaAs is under biaxial tensile stress, σ||≊2.1×109 dyn/cm2, and is tetragonally distorted with unit cell dimensions 5.6424±0.0012 Å and 5.6656±0.0012 Å. The dislocation density in the GaAs, determined from the rocking curve width, is less than 4.2×107 cm-2. The GaAs(001) axis is tilted with respect to the Si(001), toward the substrate normal. This misorientation is a strain relief mechanism and is caused by shear strain energy in the nucleating GaAs.


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