Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy

Posthill, J. B.; Tarn, J. C. L.; Das, K.; Humphreys, T. P.; Parikh, N. R.
September 1988
Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1207
Academic Journal
Boundaries between different antiphase domains have been unambiguously identified in heteroepitaxial GaAs on silicon substrates by transmission electron microscopy. A simple and reliable method is described for assessing the presence or absence of these domain boundaries in GaAs. The domain size was found to be as small as ∼0.1 μm in GaAs that had been grown on nominal Si(001) in which a buried, implanted oxide had been previously formed. These boundaries are expected to degrade electrical performance and device reliability modify electronic transport and degrade device performance.


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