TITLE

Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy

AUTHOR(S)
Posthill, J. B.; Tarn, J. C. L.; Das, K.; Humphreys, T. P.; Parikh, N. R.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1207
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Boundaries between different antiphase domains have been unambiguously identified in heteroepitaxial GaAs on silicon substrates by transmission electron microscopy. A simple and reliable method is described for assessing the presence or absence of these domain boundaries in GaAs. The domain size was found to be as small as ∼0.1 μm in GaAs that had been grown on nominal Si(001) in which a buried, implanted oxide had been previously formed. These boundaries are expected to degrade electrical performance and device reliability modify electronic transport and degrade device performance.
ACCESSION #
9828197

 

Related Articles

  • Defect formation in the solid phase epitaxial growth of GaAs films on Si (001) substrate. Cho, K. I.; Choo, W. K.; Lee, J. Y.; Park, S. C.; Nishinaga, T. // Journal of Applied Physics;1/1/1991, Vol. 69 Issue 1, p237 

    Examines defect formation in the solid phase epitaxial growth of gallium arsenide (GaAs) films on silicon (Si) (001) substrate. Factors that hamper GaAs growth on Si; Origin of stacking faults in GaAs films; Use of transmission electron microscopy for cross-sectional observation of the...

  • Effects of InGaAs/GaAs strained-layer superlattices in optimized molecular-beam-epitaxy GaAs on Si with Si buffer layers. Georgakilas, A.; Christou, A. // Journal of Applied Physics;12/1/1994, Vol. 76 Issue 11, p7332 

    Presents a study that investigated the effects of InGaAs/gallium arsenide (GaAs) strained-layer superlattices (SLS) in optimized molecular-beam-epitaxy (MBE) GaAs on silicon (Si) with Si buffer layers. Preparation of the MBE samples; Description of the GaAs-SLS buffer structure and planar-view...

  • InGaAs/GaAs multiple strained-layer structure grown on a lattice-matched InGaAs substrate wafer. Fritz, I.J.; Klem, J.F. // Applied Physics Letters;4/10/1995, Vol. 66 Issue 15, p1957 

    Examines the epitaxial growth of indium gallium arsenide (InGaAs)/GaAs multilayers on lattice matched InGaAs substrate wafer. Details on the interface between substrate and buffer; Impact of compositional variation across the wafer on epilayers and substrate; Use of transmission electron...

  • Transmission electron microscopy investigation of dislocation bending by GaAsP/GaAs strained-layer superlattices on heteroepitaxial GaAs/Si. Whelan, J. S.; George, T.; Weber, E. R.; Nozaki, S.; Wu, A. T.; Umeno, M. // Journal of Applied Physics;11/15/1990, Vol. 68 Issue 10, p5115 

    Details a study which investigated the effects of strained-layer superlattices (SLS) on threading dislocations present in gallium arsenide/silicon heteroepitaxial layers. Results of transmission electron microscopy; Observation on effective dislocation bending; Dependence of threading...

  • Polarity of small {111}GaAs domains on (100)Sc[sub 0.32]Er[sub 0.68]As formed during.... Hugsted, B.; Tafto, J. // Applied Physics Letters;11/1/1993, Vol. 63 Issue 18, p2499 

    Examines the formation of gallium arsenide domains on scandium erbium arsenic during molecular beam epitaxial growth. Application of transmission electron microscopy and electron channeling; Manifestation on the substrate orientation observation; Discussion on possible models of the interface.

  • Characterization of In[sub x]Ga[sub 1-x]As/GaAs strained-layer superlattices by transmission.... Wei, X.L.; Fung, K.K. // Applied Physics Letters;8/3/1992, Vol. 61 Issue 5, p572 

    Characterizes four In[sub x]Ga[sub 1-x]As/gallium arsenide (GaAs) strained-layer superlattices by molecular beam epitaxy. Use of transmission electron microscopy; Effect of strained superlattice on crystal dislocation; Differences in the thickness of In[sub x]Ga[sub 1-x]As and GaAs layers in...

  • Formation of As precipitates in GaAs by ion implantation and thermal annealing. Claverie, A.; Namavar, Fereydoon; Liliental-Weber, Z. // Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1271 

    Examines the possibility of regrowing an amorphous GaAs layer by high dose As implantation at room temperature. Use of transmission electron microscopy on the structure of the precipitates; Efficacy of the process for the formation of low cost semi-insulating GaAs layers; Presence of defects in...

  • Origin of a pair of stacking faults in pseudomorphic ZnSe epitaxial layers on GaAs. Ohno, Y.; Adachi, N.; Takeda, S. // Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p54 

    We have revealed the origin of typical extended defects in semiconductor heterostructures with heterovalent interfaces, namely pairs of stacking faults in pseudomorphic ZnSe epitaxial layers grown on a GaAs(001) substrate. We have taken structural images of the defects by means of...

  • Growth, branching, and kinking of molecular-beam epitaxial <110> GaAs nanowires. Wu, Z.H.; Mei, X.; Kim, D.; Blumin, M.; Ruda, H.F.; Liu, J.0.; Kavanagh, K.L. // Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3368 

    GaAs nanowires were grown on GaAs (100) substrates by vapor–liquid–solid growth. About 8% of these nanowires grew in <110> directions with straight, Y-branched or L-shaped morphologies. The role of strain-induced reduction in surface free energy is discussed as a possible factor...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics