High coupled power 1.3 μm edge-emitting light-emitting diode with a rear window and an integrated absorber

Gen-ei, K.; Tanioka, A.; Suhara, H.; Chinen, K.
September 1988
Applied Physics Letters;9/26/1988, Vol. 53 Issue 13, p1138
Academic Journal
An InGaAsP edge-emitting light-emitting diode with a rear window and an integrated absorber is developed. Over 220 μW of coupled power is achieved, for the first time, without the use of antireflection front facet coating. Even at low ambient temperature of -40 °C the stimulated emission is well suppressed.


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