TITLE

InGaAs/InP superlattice mixing induced by Zn or Si diffusion

AUTHOR(S)
Schwarz, S. A.; Mei, P.; Venkatesan, T.; Bhat, R.; Hwang, D. M.; Schwartz, C. L.; Koza, M.; Nazar, L.; Skromme, B. J.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/19/1988, Vol. 53 Issue 12, p1051
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Recent studies have shown that Zn diffusion preferentially induces mixing (interdiffusion) of In and Ga in unstrained InGaAs/InP superlattices, with little diffusion of the anions. In the present study, a 3.1% lattice mismatch is accommodated in the mixed superlattice with no observable defects in layers on the order of the predicted critical layer thickness. At high concentrations, Zn resides preferentially in the InP layers in the form of Zn3P2. In marked contrast to this behavior of Zn, Si diffusion is observed to cause comparable interdiffusion on the cation and anion sublattices within a narrow range of dopant concentration. This result is at odds with some recent mixing models and is consistent with a divacancy mixing mechanism.
ACCESSION #
9828154

 

Related Articles

  • Experimental proof-of-principle investigation of enhanced Z[sub 3D]T in (001) oriented Si/Ge superlattices. Koga, T.; Cronin, S. B.; Cronin, S.B.; Dresselhaus, M. S.; Dresselhaus, M.S.; Liu, J. L.; Liu, J.L.; Wang, K. L.; Wang, K.L. // Applied Physics Letters;9/4/2000, Vol. 77 Issue 10 

    An experimental proof-of-principle of an enhanced Z[sub 3D]T (thermoelectric figure of merit) is demonstrated using (001) oriented Si/Ge superlattices. The highest value of the experimental Z[sub 3D]T at 300 K for a (001) oriented Si(20 Å)/Ge(20 Å) superlattice is 0.1 using κ=5 Wm[sup...

  • Investigation of GaAs/AlxGa1-xAs and InyGa1-yAs/GaAs superlattices on Si substrates. Reddy, U. K.; Ji, G.; Huang, D.; Munns, G.; Morkoç, H. // Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1748 

    We have studied the optical properties of lattice-matched GaAs/AlxGa1-xAs and InyGa1-yAs/GaAs strained-layer superlattices grown on Si substrates using the photoreflectance technique. These preliminary results show that good quality III-V epilayers can be grown on Si. The experimental data were...

  • Characterization of superlattices based on amorphous silicon. Hundhausen, M.; Santos, P.; Ley, L.; Habraken, F.; Beyer, W.; Primig, R.; Gorges, G. // Journal of Applied Physics;1/15/1987, Vol. 61 Issue 2, p556 

    Presents a study that characterized the structure of superlattices based on amorphous silicon. Analysis of the optical electron micrographs of the amorphous silicon superlattices; Examination of the scanning electron microscopic images of doping superlattices; Evaluation of the hydrogen...

  • Magneto-optical dispersion of Si1-xGex epitaxial layers and Si/Ge superlattices. Vergohl, Michael; Dettmer, Klaus // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1434 

    Studies the magneto-optical dispersion of Si1-xGex mixed crystal films on silicon substrate and an asymmetric silicon germanium superlattice. Off-diagonal element of the dielectric tensor; Spectra; Improvement of the resolution of the interband critical points; Dependencies of the relevant...

  • Self-consistent analysis of persistent photoconductivity data in Si delat-doped AlxGa1-xAs... Mejri, H.; Jazia, A. Ben // Journal of Applied Physics;11/1/1998, Vol. 84 Issue 9, p5060 

    Examines the performance of the Hall measurements on a series of silicon (Si) delta-doped AlxGa1-xAs (x=0.32) superlattices. Calculation of the minibands fore the delta-doping AlxGa1-xAs:Si superlattices; Information on electrical properties of this defect; Reference to these measurements.

  • Calculation of optical absorption associated with indirect transitions in silicon n-i-p-i structures. de Sterke, C. Martijn // Journal of Applied Physics;9/15/1988, Vol. 64 Issue 6, p3187 

    Studies indirect transitions in silicon n-i-p-i structures or superlattices. Details on the structures; Optical properties of the structures; Results of the study.

  • Wannier–Stark Localization in the Natural Superlattice of Silicon Carbide Polytypes. Sankin, V. I. // Semiconductors;Jul2002, Vol. 36 Issue 7, p717 

    Results of a study of silicon carbide polytypes under high electric fields are presented. The presence of a natural superlattice in silicon carbide polytypes is shown to introduce a miniband structure into the conduction band, which leads to a number of effects: negative differential...

  • Luminescence decay in disordered low-dimensional semiconductors. Chen, X.; Henderson, B.; O'Donnell, K.P. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2672 

    Examines the comparison between luminescence decay and time-resolved porous silicon and disordered CdSe-ZnSe superlattice. Description of the luminescence; Anomalous luminescence decays of disordered II-VI superlattices; Recombination of free carriers in random low dimensional solids.

  • Novel amorphous silicon doping superlattice device with bidirectional S-shaped negative.... Liu, C.R.; Fang, Y.K. // Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p177 

    Investigates the fabrication of amorphous silicon doping superlattice device with bidirectional S-shaped negative differential characteristics. Reason for the occurrence of S-shaped switching phenomenon; Application of electronic transportation theory; Illustration of band diagram at thermal...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics