Oxygen diffusion in antimony-doped silicon

Wijaranakula, W.; Matlock, J. H.; Mollenkopf, H.
September 1988
Applied Physics Letters;9/19/1988, Vol. 53 Issue 12, p1068
Academic Journal
The outdiffusion profiles of oxygen from (100) Czochralski-grown silicon, doped with antimony at different doping concentrations ranging between 6×1015 and 3×1018 atoms/cm3, were measured using secondary ion mass spectrometry. From the oxygen depth profiles the diffusivity of 16O was determined. It was found that the outdiffusion of 16O was not influenced by the antimony doping concentration. The diffusivity of oxygen at 1100 °C, as determined in this work, was 1.1×10-10 cm2/s. This result agrees well with the previous literature values, D=0.07 exp(-2.44/kT), which were determined in float-zone silicon.


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