TITLE

Realistic modeling of the electronic properties of doped amorphous silicon

AUTHOR(S)
Hack, M.; Street, R. A.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/19/1988, Vol. 53 Issue 12, p1083
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter we describe a fundamental approach to calculating the electronic properties of doped amorphous silicon which takes into account the thermal history of the material. Above the equilibrium temperature, the material is in a thermodynamically stable state, and this is derived by minimizing the free energy using a simple density of states model. The calculations are based on the defect compensation model of doping, introducing distributions of formation energies for neutral dangling bonds and fourfold dopant atoms while preserving charge neutrality. Our results are in good agreement with experimental data providing a realistic model for use in device simulation programs.
ACCESSION #
9828134

 

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