TITLE

Compensation mechanism in semi-insulating GaAs: The role of intrinsic acceptor defects

AUTHOR(S)
von Bardeleben, H. J.; Bourgoin, J. C.; Stievenard, D.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/19/1988, Vol. 53 Issue 12, p1089
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present experimental evidence for the presence in semi-insulating undoped GaAs of the double-acceptor defect with ionization energies of 78 and 203 meV, which is currently attributed to the GaAs antisite in concentrations of at least 2×1015 cm-3. We then discuss the implications of this result for the compensation mechanism in these materials.
ACCESSION #
9828131

 

Related Articles

  • GaAs takes on weapons-detection role. Schweber, Bill // EDN;9/26/2002, Vol. 47 Issue 21, p26 

    Reports the development of sensors using gallium arsenide doped with boron. Production of cascade of charged particles; Failure of silicon-based sensor to degrade on high radiation fields; Factors influencing the ionization of gas.

  • Band-structure dependence of impact ionization rate in GaAs. Kim, K.; Kahen, K.; Leburton, J. P.; Hess, K. // Journal of Applied Physics;4/1/1986, Vol. 59 Issue 7, p2595 

    Presents a study which examined the band-structure dependence of the electron impact ionization rate in gallium arsenide. Information on impact ionization; Calculation of the impact of ionization rates by Monte Carlo code; Conclusion.

  • Deep-level transient spectroscopy studies of defects in GaAs-AlGaAs superlattices. Martin, P. A.; Hess, K.; Emanuel, M.; Coleman, J. J. // Journal of Applied Physics;10/15/1986, Vol. 60 Issue 8, p2882 

    Presents the preliminary results of a study of defects in gallium arsenide (GaAs)-aluminum GaAs superlattices using deep-level transient spectroscopy. Defect levels observed in two superlattices; Ionization of defect levels in the presence and absence of miniband conduction; Reinterpretation of...

  • Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs. Kolník, Ján; Wang, Yang; Oğuzman, Ismail H.; Brennan, Kevin F. // Journal of Applied Physics;9/15/1994, Vol. 76 Issue 6, p3542 

    Deals with a study which incorporated the formulation of the impact-ionization transition rate of Quade and co-workers within an ensemble Monte Carlo simulator to determine the electron impact-ionization rate in bulk silicon and gallium arsenide. Model description; Results and conclusion.

  • Avalanche multiplication in submicron Al...Ga...As/GaAs multilayer structures. Chia[a], C. K.; David[b], J. P. R.; Plimmer, S. A.; Rees, G. J.; Grey, R.; Robson, P. N. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2601 

    Presents the results of a systematic study of the role of band edge discontinuities on ionization rates in periodic Al[sub x]Ga[sub 1-x]As/GaAs structures by measuring the electron and hole multiplication characteristics of in a series of submicron multilayers. Dependence on initiating carrier...

  • Soft and hard ionization thresholds in Si and GaAs. Sano, Nobuyuki; Aoki, Takahiro; Yoshii, Akira // Applied Physics Letters;10/2/1989, Vol. 55 Issue 14, p1418 

    We introduce a new simple model of ionization probabilities in semiconductors, which clarifies the origin of softness and hardness of the ionization thresholds observed in Si and GaAs, respectively. It is shown that the ionization probability is, in principle, hard in both materials in the sense...

  • Dual implant into GaAs with Si+ and Sn+ ions. Shim, Tae Earn; Itoh, Tadatsugu // Journal of Applied Physics;1/15/1989, Vol. 65 Issue 2, p486 

    Describes the annealing characteristics of implanted damage and the electrical properties for Sn[sup+] and Si[sup+] dual implanted gallium arsenide (GaAs). Covalent radii of the atoms and the effect of dopant on lattice parameter of GaAs; Depth profiles of carrier concentrations and mobilities...

  • In-diffusing divacancies as sources of acceptors in thermally annealed GaAs. Morrow, Richard A. // Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p3396 

    Presents a study which considered the rapid in-diffusion of divacancies as sources of acceptors in thermally annealed gallium arsenide (GaAs). Methods to alter the properties of GaAs; Detection of ionization levels in the band gap; Formulation of the models of divacancy.

  • Metastable impact ionization of traps model for lock-on in GaAs photoconductive switches. Partain, Larry; Day, Derek; Powell, Ron // Journal of Applied Physics;7/1/1993, Vol. 74 Issue 1, p335 

    Presents a study that described a model proposed for lock-on in gallium arsenide (GaAs) photoconductive switches based on avalanche breakdown from impact ionization of deep EL2 traps. Capability of the model; Description of a GaAs photoconductive switch; Result from irradiating the GaAs with...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics