TITLE

Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy

AUTHOR(S)
Rosner, S. J.; Amano, Jun; Lee, J. W.; Fan, J. C. C.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/19/1988, Vol. 53 Issue 12, p1101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin films (less than 1000 nm) of heteroepitaxial GaAs on Si were grown by organometallic vapor phase epitaxy with the intent of comparing the initial stages of growth with the authors’ previous experience in examining films grown by molecular beam epitaxy (MBE). The films were found to be epitaxial after 10 nm of growth at 425 °C, and to uniformly cover the substrate completely, unlike the asymmetrical island nature of MBE films grown under comparable conditions. The relaxation of strain was found to be quite similar to the MBE case.
ACCESSION #
9828122

 

Related Articles

  • Resonant photoluminescence excitation in GaAs grown directly on Si. Zemon, S.; Jagannath, C.; Shastry, S. K.; Miniscalco, W. J.; Lambert, G. // Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p213 

    We describe new results observed during resonant excitation in the excitonic region of GaAs grown directly on Si by organometallic vapor phase epitaxy. Two resolved features were found in the light-hole photoluminescence (PL) region, one identified with a free-exciton process and the other with...

  • Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs. George, T.; Weber, E. R.; Nozaki, S.; Murray, J. J.; Wu, A. T.; Umeno, M. // Applied Physics Letters;11/13/1989, Vol. 55 Issue 20, p2090 

    Enhanced incorporation of Si is observed in the metalorganic chemical vapor deposition of homoepitaxial GaAs layers, grown in the presence of Si substrates placed adjacent to the GaAs substrates in the reactor. The electron concentrations of the GaAs layers are a function of the proximity to the...

  • Crack formation and thermal stress relaxation of GaAs on Si growth by metalorganic vapor phase epitaxy. Ackaert, A.; Buydens, L.; Lootens, D.; Van Daele, P.; Demeester, P. // Applied Physics Letters;11/20/1989, Vol. 55 Issue 21, p2187 

    In this letter we report on the use of selective metalorganic vapor phase epitaxy growth as an original tool to alleviate the problem of random formation of microcracks in thick GaAs-on-Si heteroepitaxial layers. Through the use of a special mask design including the definition of sharp wedges...

  • Hydrogenation of GaAs-on-InP. Chakrabarti, U. K.; Pearton, S. J.; Hobson, W. S.; Lopata, J.; Swaminathan, V. // Applied Physics Letters;8/27/1990, Vol. 57 Issue 9, p887 

    Incorporation of atomic hydrogen into heteroepitaxial Si-doped GaAs layers grown directly on InP substrates by organometallic vapor phase epitaxy produces substantial increases in the reverse bias breakdown voltage of TiPtAu Schottky diodes fabricated on the GaAs-on-InP. Plasma hydrogenated...

  • Si delta-doped layers of GaAs by low pressure metalorganic vapor phase epitaxy. Li, G.; Jagadish, C.; Clark, A.; Larsen, C. A.; Hauser, N. // Journal of Applied Physics;8/1/1993, Vol. 74 Issue 3, p2131 

    Focuses on the silicon delta-doped layers of gallium arsenide that were grown by low pressure metal organic vapor phase epitaxy. Effects of purge time, doping temperature and doping period on sheet carrier concentration of delta-doped layers; Mechanisms controlling the dopant confinement;...

  • Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source. Liu, Chee-Wee; Chen, Sheng-Li; Lay, Jyh-pyng; Lee, Si-Chen; Lin, Hao-Hsiung // Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1634 

    The silicon doping of GaAs grown by metalorganic chemical vapor deposition using a silane source has been investigated. The amphoteric property of the Si dopant is demonstrated for the first time. It is found that the doping characteristics are strongly temperature dependent. At the growth...

  • Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide. Masatoshi Kawakita; Kyota Okabe; Takashi Kimura // Applied Physics Letters;1/11/2016, Vol. 108 Issue 2, p1 

    We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdOx bilayer system. Bipolar set and...

  • Heterointerface stability in GaAs-on-Si grown by metalorganic chemical vapor deposition. Pearton, S. J.; Malm, D. L.; Heimbrook, L. A.; Kovalchick, J.; Abernathy, C. R.; Caruso, R.; Vernon, S. M.; Haven, V. E. // Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p682 

    The stability of the electrical and structural properties of GaAs directly deposited on Si by metalorganic chemical vapor deposition is examined. Extended annealing at 900 °C leads to substantial diffusion of Si across the heterointerface while under the same conditions there is no...

  • Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy. Yu, H. W.; Chang, E. Y.; Yamamoto, Y.; Tillack, B.; Wang, W. C.; Kuo, C. I.; Wong, Y. Y.; Nguyen, H. Q. // Applied Physics Letters;10/24/2011, Vol. 99 Issue 17, p171908 

    The growth of GaAs epitaxy on Ge/Si substrates with an arsenic prelayer grown with graded temperature ramped from 300 to 420 °C is investigated. It is demonstrated that the graded-temperature arsenic prelayer grown on a Ge/Si substrate annealed at 650 °C not only improves the surface...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics