TITLE

Linearly ramped temperature transient rapid thermal oxidation of silicon

AUTHOR(S)
Moslehi, Mehrdad M.; Kermani, Ahmad; Saraswat, Krishna C.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/19/1988, Vol. 53 Issue 12, p1104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
New results on the growth kinetics of rapid thermal oxidation of Si using transient linearity ramped saw-toothed and triangular wafer temperature versus time profiles are reported. The peak wafer temperature and the heat-up/cool-down rates were varied in the ranges of 950–1200 °C and 1–200 °C/s, respectively. The grown oxides were ∼20–200 Å thick depending on the growth conditions. A comparison of the experimental data with the numerical simulation results reveals that the thin oxide steady-state dry oxidation kinetics model underestimates the thickness of oxides grown by the ramped temperature transient oxidations.
ACCESSION #
9828120

 

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