TITLE

Comment on ‘‘Relaxation of strained-layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)]

AUTHOR(S)
People, R.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/19/1988, Vol. 53 Issue 12, p1127
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Comments on the article by Dodson et.al. focusing on the relaxation of strained-layer semiconductor structures through a plastic flow method. Strain relaxation in semiconductor heterostructures; Dislocation mechanisms; Influence of the lattice-mismatch-induced strain field in generating a segment of interfacial misfit dislocation.
ACCESSION #
9828107

 

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