TITLE

Response to ‘‘Comment on ‘Relaxation of strained-layer semiconductor structures via plastic flow’ ’’ [Appl. Phys. Lett. 53, 1127 (1988)]

AUTHOR(S)
Dodson, Brian W.; Tsao, Jeffrey Y.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/19/1988, Vol. 53 Issue 12, p1128
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In response to the Comment of Strained-Layer Semiconductor Structures Plastic Flow , we would like to point out that one of us has developed an approximate solution for the plastic flow model which interpolates between the Matthews-Blakeslee expression for thermodynamic critical thickness and the People-Bean expression for large amounts of relaxation, and that Peopl e’s comment that high resolution studies of relaxation in the SiGe/Si system are lacking is not quite correct. (AIP)
ACCESSION #
9828105

 

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