Grating enhancement of quantum well detector response

Goossen, K. W.; Lyon, S. A.; Alavi, K.
September 1988
Applied Physics Letters;9/19/1988, Vol. 53 Issue 12, p1027
Academic Journal
We have measured the enhancement in the response of a quantum well infrared detector by the incorporation of a metallic diffraction grating into the structure. We find an enhancement ratio of about 30, and its spectrum indicates that waveguiding of diffracted light occurs within the sample. Strong coupling to evanescent modes of the grating is not observed.


Related Articles

  • Resonator-quantum well infrared photodetectors. Choi, K. K.; Jhabvala, M. D.; Sun, J.; Jhabvala, C. A.; Waczynski, A.; Olver, K. // Applied Physics Letters;11/11/2013, Vol. 103 Issue 20, p201113 

    We applied a recent electromagnetic model to design the resonator-quantum well infrared photodetector (R-QWIP). In this design, we used an array of rings as diffractive elements to diffract normal incident light into parallel propagation and used the pixel volume as a resonator to intensify the...

  • Photorefractive asymmetric Fabry-Perot quantum wells: Transverse-field geometry. Kwolek, K.M.; Melloch, M.R. // Applied Physics Letters;8/7/1995, Vol. 67 Issue 6, p736 

    Examines the diffraction efficiencies of photorefractive quantum wells during four-wave mixing. Employment of sensitive amplitude and phase control of multiple-beam interference within the device; Definition of input and output diffraction efficiencies; Optimization of electro absorption...

  • X-ray diffraction study of GaAs/InAs/GaAs ultrathin single quantum well. Bai, Jie; Liu, Wenhan; Wu, Ziqin; Wang, Yutian; Xiu, Lisong; Jiang, Xiaoming // Journal of Applied Physics;5/15/1996, Vol. 79 Issue 10, p7627 

    Presents an X-ray diffraction study of a GaAs/InAs/GaAs ultrathin single quantum well. Simulation method; Results; Discussion.

  • Intrinsic multiple quantum well spatial light modulators. Rabinovich, W.S.; Bowman, S.R. // Applied Physics Letters;2/27/1995, Vol. 66 Issue 9, p1044 

    Evaluates the intrinsic multiple quantum well spatial light modulators. Disadvantage of making the semi-insulating region; Factors attributing the improvement of modulator's speed; Enhancement of the diffraction efficiency.

  • Microanalysis on the (200) diffraction intensity to determine the Al concentrations for AlGaAs-GaAs multiple-quantum-well structures. Ou, H.-J.; Cowley, J. M.; Chyi, J. I.; Salvador, A.; Morkoç, H. // Journal of Applied Physics;1/15/1990, Vol. 67 Issue 2, p698 

    Examines the microanalysis on the diffraction intensity to determine the aluminum concentration for aluminum compound multiple quantum-well structures. Development of technique for monitoring of surface conditions during the growth of aluminum compound semiconductor layers; Details on the...

  • Arrays of 128×128 Photodetectors Based on HgCdTe Layers and Multilayer Heterostructures with GaAs/AlGaAs Quantum Wells. Ovsyuk, V. N.; Sidorov, Yu. G.; Vasil’ev, V. V.; Shashkin, V. V. // Semiconductors;Sep2001, Vol. 35 Issue 9, p1110 

    A technology has been elaborated and photodetector modules based on Hg[sub 1-x]Cd[sub x]Te/GaAs heterostructures and GaAs/A1GaAs multiquantum-well structures grown by molecular-beam epitaxy were fabricated for the 3-5 and 8-12 μm spectral ranges. The photosensitive HgCdTe layers were grown on...

  • InAs/Al[sub 0.2]Ga[sub 0.8]Sb quantum well Hall sensors with improved temperature stability. Bekaert, J.; Moshchalkov, V.V.; Bruynseraede, Y.; Behet, M.; De Boeck, J.; Borghs, G. // Review of Scientific Instruments;Jun99, Vol. 70 Issue 6, p2715 

    Describes the fabrication of cross-shaped Hall sensors with high sensitivity and excellent temperature stability from quantum wells based on an InAS/Al[sub 0.2]Ga[sub 0.8]Sb heterostructure. Epitaxial growth and device fabrication; Temperature dependence of the input resistance for all three...

  • CORRUGATED QUANTUM WELL INFRARED PHOTODETECTORS AND ARRAYS. Choi, K.K. // International Journal of High Speed Electronics & Systems;Sep2002, Vol. 12 Issue 3, p715 

    Quantum well infrared photodetectors (QWIPs) have many advantages in infrared detection, mainly due to the mature III-V material technology. The employment of the corrugated light-coupling scheme further improves the technology for its simplicity and efficiency. A C-QWIP enjoys the same...

  • QWIP-LED PIXELLESS THERMAL IMAGING DEVICE. Liu, H.C.; Dupont, E.; Byloos, M.; Buchanan, M.; Song, C.-Y.; Wasilewski, Z.R. // International Journal of High Speed Electronics & Systems;Sep2002, Vol. 12 Issue 3, p891 

    Over the past several years, we have been developing an alternative approach to thermal imaging based on pixelless quantum well infrared photodetectors (QWIP) integrated with light emitting diodes (LED). This paper reviews the basic concept, presents our latest results, and discusses issues...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics