TITLE

Growth of InSb and InAs1-xSbx on GaAs by molecular beam epitaxy

AUTHOR(S)
Chyi, J.-I.; Kalem, S.; Kumar, N. S.; Litton, C. W.; Morkoç, H.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/19/1988, Vol. 53 Issue 12, p1092
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
InSb and InAs1-xSbx epitaxial layers have been successfully grown on (100)GaAs substrates by molecular beam epitaxy. Remarkably good morphologies were obtained despite the large lattice mismatch (14%) between InSb and GaAs. Room-temperature electron mobilities as high as 57 000 cm2/V s were measured in InSb layers of about 5 μm thick with ND-NA∼1.6×1016 cm-3. The substrate temperature and Sb/In flux ratio were found to critically influence the quality of InSb epilayers. By employing dimeric instead of tetrameric sources, the composition of the InAs1-xSbx films was observed to be relatively independent of substrate temperature. Electron mobilities of 20 000 and 8800 cm2/V s, at 300 and 77 K, respectively, were obtained for a 1.6-μm-thick InAs1-xSbx (x=0.67) layer.
ACCESSION #
9828089

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics