Nonlinear gain caused by cavity standing wave dielectric grating as an explanation of the relationship between resonance frequency and damping rate of semiconductor diode lasers

Su, Chin B.
September 1988
Applied Physics Letters;9/12/1988, Vol. 53 Issue 11, p950
Academic Journal
Calculation using the recently proposed nonlinear gain caused by the cavity standing wave induced gain and index grating shows that the resonance frequency square is very nearly proportional to the modulation damping factor irrespective of cavity dimensions in semiconductor diode lasers. This is in agreement with experimental observation. Furthermore, the magnitude of the predicted damping factors is compared with measurements of V-groove lasers and mass-transport lasers. Excellent agreement is also obtained. This gives an alternative explanation of the origin of nonlinear gain other than spectral hole burning.


Related Articles

  • Design considerations of large aperture perpendicular gratings semiconductor ring lasers. Hardy, A.; Dzurko, K.M.; Welch, D.F.; Scifres, D.R.; Lang, R.J.; Waarts, R. // Applied Physics Letters;3/1/1993, Vol. 62 Issue 9, p931 

    Presents the design considerations of large aperture perpendicular gratings semiconductor ring lasers. Analysis on the laser geometry; Contents of the laser cavity; Operation of lasers at a single mode order with modal discriminations.

  • High-power (>0.9 W cw) diffraction-limited semiconductor laser based on a fiber Bragg grating.... Cornwell Jr., Donald M.; Thomas, Heather J. // Applied Physics Letters;2/10/1997, Vol. 70 Issue 6, p694 

    Examines the diffraction-limited semiconductor laser based on a fiber Bragg grating external cavity. Advantage of fiber pigtailing in the semiconductor amplifier; Comparison between Bragg and bulk diffraction gratings; Injection of frequency-selective feedback into the amplifier.

  • Wavelength switching in multicavity lasers. Kanjamala, A.P.; Levi, A.F.J. // Applied Physics Letters;7/21/1997, Vol. 71 Issue 3, p300 

    Uses coupled cavity effects to sequentially switch lasing wavelength at a constant injection current. Advances in fiber Bragg grating technology; Features of the antireflection coated semiconductor laser diode; Role of residual reflectivity from the antireflection coating in determining device...

  • Semiconductor lasers with uniform longitudinal intensity distribution. Schrans, Thomas; Yariv, Amnon // Applied Physics Letters;4/16/1990, Vol. 56 Issue 16, p1526 

    Power-dependent nonuniform longitudinal intensity distribution leading to spectral and spatial instabilities is a major problem in semiconductor lasers. It is shown theoretically that a proper choice of the longitudinal distribution of the gain as well as that of the magnitude of the grating...

  • Reduced temperature dependence of threshold current by broadband enhanced feedback: A new.... Tsang, W.T.; Choa, F.S. // Applied Physics Letters;1/6/1992, Vol. 60 Issue 1, p18 

    Presents an approach to reduce the rate of threshold current and external quantum efficiency in a semiconductor laser. Correlation between temperature and quantum efficiency degradation rate; Use of multilayer coatings and chirp gratings at the lasing wavelength; Basis on the total laser cavity...

  • Photonic-crystal distributed-feedback lasers. Vurgaftman, I.; Meyer, J. R. // Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1475 

    The far-field emission characteristics and spectral purity of photonic-crystal distributed-feedback (PCDFB) lasers, in which the grating is defined on a two-dimensional lattice that is tilted with respect to the facets, are analyzed using a self-consistent time-domain simulation. It is shown...

  • Dynamics of Nonequilibrium Gratings Induced in Silicon Films by Femtosecond Laser Pulses. Galyautdinov, M. F.; Lobkov, V. S.; Moiseev, S. A.; Negrashov, I. V. // Semiconductors;Dec2001, Vol. 35 Issue 12, p1366 

    Relaxation of the dynamic gratings formed by nonequilibrium charge carriers in thin single-crystal silicon films during femtosecond laser excitation was studied. The case of the ultimate concentration of carriers (N ≈ 10[sup 21] cm[sup -3]) is considered. Ambipolar diffusion and Auger...

  • Narrow-linewidth operation of broad-stripe single quantum well laser diodes in a grazing.... Gavrilovic, P.; Chelnokov, A.V. // Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p2977 

    Describes an external-cavity semiconductor laser employing a grazing-incidence grating and 100-micrometer stripe gain-guided laser diodes. Use of multimode diodes in increasing the output power; Optimization of facet coatings to increase the single-mode power; Maximization of grating feedback...

  • Improved laser modulation response by frequency modulation to amplitude modulation conversion in.... McAdams, Matt; Peral, Eva // Applied Physics Letters;8/18/1997, Vol. 71 Issue 7, p879 

    Examines effect of fiber grating on the system response of modulated semiconductor lasers. Incorporation of fiber gratings with dispersive optical fibers; Conversion of frequency modulation into amplitude modulation; Prediction of the modulation conversion by Fourier domain analysis of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics