TITLE

Atomic abruptness in InGaAsP/InP quantum well heterointerfaces grown by low-pressure organometallic vapor phase epitaxy

AUTHOR(S)
Thijs, P. J. A.; Montie, E. A.; van Kesteren, H. W.; ’t Hooft, G. W.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/12/1988, Vol. 53 Issue 11, p971
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High quality quantum well structures of InGaAsP (λ = 1.55 µm)/InP were grown by lowpressure organometallic vapor phase epitaxy on 0.2° and 2° misoriented (001) InP substrates. Multiple-line 2 K photoluminescence emission was observed for the first time from thin quantum wells of InGaAsP grown on 0.2° misoriented substrates. The multiple-line emission is interpreted to result from half-monolayer well width variations within one welt with lateral sizes larger than the excitonic radius. Quantum wells grown on substrates with 2° misorientation showed generally wider single-line photoluminescence emission due to well width variations within one well with lateral sizes smaller than the excitonic radius. The studied well thicknesses ranged from ≈70 Å down to ≈4 Å, which showed emission as short as 905 nm (1.37 eV) corresponding to a spectral upshift of 514 meV. The very high quality of the quantum wells of InGaAsP is indicated by a 2 K photoluminescence linewidth of 8.8 meV for a ≈ 6 Å well.
ACCESSION #
9828064

 

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