TITLE

GaInAs/GaInAsP/InP heterostructure bipolar transistors with very thin base (150 Ã…) grown by chemical beam epitaxy

AUTHOR(S)
Tsang, W. T.; Levi, A. F. J.; Burkhardt, E. G.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/12/1988, Vol. 53 Issue 11, p983
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It is demonstrated that chemical beam epitaxy (CBE) is suitable for growing high quality GaInAs (P)/InP heterostructure bipolar transistors. Step-graded double-heterostructure bipolar transistors with very thin base (150 Å) and very high p doping (∼5 × 10[sup 19] cm ³), and with an added "grading layer" of 200 Å GaInAsP (E[sub g] = 0.94 eV) between the GaInAs/InP base-collector junction, have shown good current drive capability and excellent current gain (β = 2500). In addition, CBE-grown standard single-heterostructure bipolar transistors with a 1000 Å base and 2 × 10[sup 18] cm[sup -3] p doping are characterized by high gain, β ∼ 3500, which is only weakly dependent on the collector current.
ACCESSION #
9828058

 

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