2.6 μm InGaAs photodiodes

Martinelli, Ramon U.; Zamerowski, Thomas J.; Longeway, Paul A.
September 1988
Applied Physics Letters;9/12/1988, Vol. 53 Issue 11, p989
Academic Journal
We have developed In[sub 0.82]Ga[sub 0.18]As p-n homojunction photodiodes that have a long-wavelength threshold at about 2.65 µm. A compositionally graded In[sub x]Ga[sub 1-x]As layer accommodates the 2% lattice mismatch between the InP substrate and the In[sub 0.82]Ga[sub 0.18]As active layers of the device. At -2 V reverse bias the room-temperature dark current is 3.5 µA (32 mA/cm²), and the quantum efficiency is 70-75% over the wavelength interval of 2.1-2.6 µm.


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