Effects of two-dimensional confinement on the optical properties of InGaAs/InP quantum wire structures

Gershoni, D.; Temkin, H.; Dolan, G. J.; Dunsmuir, J.; Chu, S. N. G.; Panish, M. B.
September 1988
Applied Physics Letters;9/12/1988, Vol. 53 Issue 11, p995
Academic Journal
We describe fabrication and photoluminescence excitation of InGaAs/InP quantum wires with a lateral dimension of ∼350 Å. Transverse confinement results in the splitting of the n = 1 heavy hole-electron transition. Three of these levels are observed in the excitation spectrums The exciton energies agree with the theoretical predictions based on a new method of solving the two-dimensional effective mass Schrödinger equation.


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