TITLE

Inelastic tunneling in AlAs-GaAs-AlAs heterostructures

AUTHOR(S)
Mendez, E. E.; Calleja, E.; Wang, W. I.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/12/1988, Vol. 53 Issue 11, p977
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X[sub AlAs]-Γ[sub GaAs] discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current ratios in resonant tunneling devices with thin AlAs barriers.
ACCESSION #
9828016

 

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