Hybrid approach to two-dimensional surface-emitting diode laser arrays

Donnelly, J. P.; Bailey, R. J.; Wang, C. A.; Simpson, G. A.; Rauschenbach, K.
September 1988
Applied Physics Letters;9/12/1988, Vol. 53 Issue 11, p938
Academic Journal
A new hybrid structure for two-dimensional surface-emitting diode laser arrays has been demonstrated. Each hybrid array consists of linear arrays of GaAs/AlGaAs lasers, with conventional cleaved end facets, that are mounted in grooves etched in a Si substrate. The etched grooves have flat bottoms and 45° sidewalls that are coated with a highly reflecting Cr/ Au layer. A hybrid array with three 4-mm-wide GaAs/AlGaAs linear laser arrays has been fabricated and tested. Approximately 10 W of peak power perpendicular to the array surface was obtained from each of the linear arrays for 11-12 A of pulsed current per array. The measured differential quantum efficiencies were 65-70%, indicating that the 45° metallized sidewalls deflect by 90° essentiality all of the light emitted from the laser facets. The new approach allows for the use of integral Si heat sinks and should prove useful for fabricating large, high-power, two-dimensional laser arrays in any material system.


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