First room-temperature cw operation of a GaInAsP/InP light-emitting diode on a silicon substrate

Razeghi, M.; Blondeau, R.; Defour, M.; Omnes, F.; Maurel, P.; Brillouet, F.
September 1988
Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p854
Academic Journal
We report in this letter the first successful fabrication of an InP-GaInAsP light-emitting diode, emitting at 1.15 μm grown by low-pressure metalorganic chemical vapor deposition on a silicon substrate. The device has been operated under continuous wave operation at room temperature for 24 h (with an injection current of 200 mA), and showed no degradation.


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