TITLE

Raman scattering in InAs1-xSbx grown by organometallic vapor phase epitaxy

AUTHOR(S)
Cherng, Y. T.; Ma, K. Y.; Stringfellow, G. B.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p886
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The first investigation of the lattice dynamics of the ternary alloy InAs1-xSbx has been made using Raman scattering. The InAs1-xSbx epilayers were grown by organometallic vapor phase epitaxy on (100) InAs and InSb substrates over the entire composition range. The spectra in the optical phonon frequency range show only one set of longitudinal- and transverse-optical (LO,TO) modes, which vary continuously with composition for x≤0.6, and two sets of LO modes for x>0.6. Both disorder-activated acoustic and optical phonon modes also appear.
ACCESSION #
9827970

 

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