Enhanced electrical quality of low-temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma-enhanced chemical vapor deposition

Ohi, S.; Burger, W. R.; Reif, R.
September 1988
Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p891
Academic Journal
We report in this letter the results of experiments comparing the electrical properties of low-temperature epitaxial silicon deposited by plasma-enhanced chemical vapor deposition (PECVD) and ultralow pressure chemical vapor deposition (U-LPCVD). Diode characteristics indicate a strong dependence of the electrical quality of the PECVD films on the plasma power. The data indicate that, in contrast to a purely thermal deposition (the U-LPCVD films), a low-power PECVD deposition (2.5–5 W) improves the electrical quality of the epitaxial layers and lowers the minimum epitaxy temperature. A high-power plasma (20 W), however, degrades the electrical characteristics in comparison to a strictly thermal deposition.


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