TITLE

Reflection high-energy electron diffraction intensity oscillations in IV-VI compound semiconductors

AUTHOR(S)
Fuchs, Jacob; Feit, Ze’ev; Preier, Horst
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p894
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reflection high-energy electron diffraction intensity oscillations were observed for the first time during layer-by-layer growth of IV-VI compound semiconductors. Epitaxial PbSe and PbTe layers were grown by molecular beam epitaxy on cleaved BaF2 (111) at a substrate temperature range of 210–350 °C. The growth rate for both compounds was measured using in situ intensity oscillations, and was verified by stylus thickness measurements. Very little variation in growth rate was observed while varying the substrate temperature in this range.
ACCESSION #
9827966

 

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