TITLE

Formation of low-temperature Al/n-Si Schottky contacts using a partially ionized beam deposition technique

AUTHOR(S)
Yapsir, A. S.; Bai, P.; Lu, T.-M.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High quality Al/n-Si Schottky contacts have been fabricated using the partially ionized beam (PIB) deposition technique in a conventional vacuum condition without post heat treatment. The electrical characteristics of the diodes were extremely uniform across a 3 in. wafer and were stable with respect to a furnance annealing performed at 450 °C for 30 min. Scanning electron microscope examination revealed much shallower pit formation on the Si surface, as compared to that deposited by conventional means, following the heat treatment. A completely smooth Si surface was observed after a 10 s rapid thermal annealing at 450 °C. The observed behavior could be attributed to the creation of ‘‘contact openings’’ in the native oxide during deposition by ion bombardment, allowing Al to make an intimate contact to Si. This PIB deposition of metal-semiconductor contacts may be an important metallization scheme for the future low-temperature processing of shallow junctions for very high speed integrated circuits.
ACCESSION #
9827959

 

Related Articles

  • Spike train generation and current-to-frequency conversion in silicon diodes. Coon, D. D.; Perera, A. G. U. // Applied Physics Letters;7/31/1989, Vol. 55 Issue 5, p478 

    A device physics model is developed to analyze spontaneous neuron-like spike train generation in current driven silicon p+-n-n+ devices in cryogenic environments. The model is shown to explain the very high dynamic range (107) current-to-frequency conversion and experimental features of the...

  • Study of forward characteristics of a cryogenic temperature sensor diode. Bose, Mohua; Ota, S.B. // Review of Scientific Instruments;Dec1996, Vol. 67 Issue 12, p4176 

    Discusses the current dependence of the forward voltage of a cryogenic silicon diode temperature sensor in a certain temperature range. Increased sensitivity of the diode for lower current values in the high temperature range; Suppression of the rapid increase of the forward voltage at low...

  • The behavior of silicon p-n junction-based devices at liquid helium temperatures. Simoen, E.; Dierickx, B.; Deferm, L.; Claeys, C. // Journal of Applied Physics;7/15/1991, Vol. 70 Issue 2, p1016 

    Focuses on a study which investigated the forward current-voltage characteristics of silicon positive to negative junction diodes at liquid helium temperatures (LHT). Challenges in operating semiconductor system at LHT; Interface-related breakdown and injection; Implications for other devices.

  • Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier. Ando, Y.; Hamaya, K.; Kasahara, K.; Kishi, Y.; Ueda, K.; Sawano, K.; Sadoh, T.; Miyao, M. // Applied Physics Letters;5/4/2009, Vol. 94 Issue 18, p182105 

    We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ-doped n+-Si layer (∼1019 cm-3) near the interface between a ferromagnetic Fe3Si contact and a Si channel...

  • Recrystallization Behavior of Aluminum Layers in Al/Ti/Si and Al/Ti/SiOx/Si Structures. Snitovsky, Yu. // Inorganic Materials;Aug2005, Vol. 41 Issue 8, p807 

    The texturing of aluminum in Al/Ti bilayers on (111) Si with and without a low-temperature oxide layer is studied by electron microscopy and x-ray diffraction at different boron and phosphorus concentrations in silicon. The Al layers grown on B-doped Si are shown to have extremely smooth...

  • Ion-implanted charge collection contacts for high purity silicon detectors operated at 20 mK. Young, B.A. // Review of Scientific Instruments;Mar95, Vol. 66 Issue 3, p2625 

    Describes the design, fabrication and characterization of ion-implanted charge collection contacts for silicon hybrid detectors. Discussion of physical constraints on the general design of semiconductor hybrid detectors; Development of ionization collection contacts for cryogenic silicon detectors.

  • Results and Prospects for the Cryogenic Dark Matter Search (CDMS) Experiment. Serfass, B. // Journal of Low Temperature Physics;Jun2012, Vol. 167 Issue 5/6, p1119 

    The Cryogenic Dark Matter Search (CDMS) experiment, located at the Soudan underground mine, operated 30 low-temperature Ge and Si detectors for several years to search for Weakly Interacting Massive dark matter Particles (WIMPs). Due to their excellent background discrimination power and low...

  • Pt/p-strained-Si Schottky diode characteristics at low temperature. Chattopadhyay, S.; Bera, L.K. // Applied Physics Letters;8/18/1997, Vol. 71 Issue 7, p942 

    Evaluates the Schottky barrier height and ideality factor of platinum on p-type strained silicon at low temperature. Relationship between ideality factor and temperature; Application of thermionic emission for Schottky barrier diode analysis; Factors attributing the disappearance of ideality...

  • High-current-density thin-film silicon diodes grown at low temperature. Wang, Qi; Ward, Scott; Duda, Anna; Hu, Jian; Stradins, Paul; Crandall, Richard S.; Branz, Howard M.; Perlov, Craig; Jackson, Warren; Mei, Ping; Taussig, Carl // Applied Physics Letters;9/13/2004, Vol. 85 Issue 11, p2122 

    High-performance thin-film silicon n–i–p diodes are fabricated at temperatures below 160 °C using hot-wire chemical vapor deposition. The 0.01 mm2 diodes have a forward current-density of near 1000 A/cm2 and a rectification ratio over 107 at ±2 V. Use of microcrystalline...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics