TITLE

Effects of microcracking on AlxGa1-xAs-GaAs quantum well lasers grown on Si

AUTHOR(S)
Deppe, D. G.; Hall, D. C.; Holonyak, N.; Matyi, R. J.; Shichijo, H.; Epler, J. E.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p874
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Data are presented demonstrating continuous (cw) 300 K operation of p-n AlxGa1-xAs-GaAs quantum well heterostructure lasers grown on Si and fabricated with naturally occurring microcracks running parallel to or perpendicular to the laser stripe. Operation for over 17 h is demonstrated for a diode with a parallel microcrack inside the active region. Diodes with microcracks perpendicular to the laser stripe exhibit relatively ‘‘square’’ light output versus current (L-I) characteristics and spectral behavior indicating internal reflections involving coupled multiple (internal) cavities. The lasers have operated (cw, 300 K) as long as 16 h.
ACCESSION #
9827927

 

Related Articles

  • Room-temperature continuous operation of p-n AlxGa1-xAs-GaAs quantum well heterostructure lasers grown on Si. Deppe, D. G.; Holonyak, N.; Nam, D. W.; Hsieh, K. C.; Jackson, G. S.; Matyi, R. J.; Shichijo, H.; Epler, J. E.; Chung, H. F. // Applied Physics Letters;8/31/1987, Vol. 51 Issue 9, p637 

    We describe the construction and room-temperature (300 K) continuous (cw) operation of p-n diode AlxGa1-xAs-GaAs quantum well heterostructure (QWH) lasers grown on Si substrates. The QWH crystal is grown in two stages, the first part by molecular beam epitaxy (MBE) and the single-well quantum...

  • Coupled stripe AlxGa1-xAs-GaAs quantum well lasers defined by impurity-induced (Si) layer disordering. Deppe, D. G.; Jackson, G. S.; Holonyak, N.; Burnham, R. D.; Thornton, R. L. // Applied Physics Letters;3/16/1987, Vol. 50 Issue 11, p632 

    A high-performance index-guided ten-stripe AlxGa1-xAs-GaAs quantum well heterostructure laser array fabricated using Si diffusion to effect impurity-induced layer disordering between the active region stripes is described. The fine spacing (1 μm) between (3 μm) emitters allows coupled mode...

  • Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate. Liebich, S.; Zimprich, M.; Beyer, A.; Lange, C.; Franzbach, D. J.; Chatterjee, S.; Hossain, N.; Sweeney, S. J.; Volz, K.; Kunert, B.; Stolz, W. // Applied Physics Letters;8/15/2011, Vol. 99 Issue 7, p071109 

    The lattice-matched growth of the direct band gap material Ga(NAsP) is a seminal concept for the monolithic integration of III/V laser on a silicon substrate. Here, we report on the growth, characterization, and lasing properties of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures...

  • Low-threshold disorder-defined buried-heterostructure AlxGa1-xAs-GaAs quantum well lasers. Deppe, D. G.; Hsieh, K. C.; Holonyak, N.; Burnham, R. D.; Thornton, R. L. // Journal of Applied Physics;12/15/1985, Vol. 58 Issue 12, p4515 

    Presents a study that used quantum well heterostructure (QWH) wafers to fabricate buried-heterostructure Al[subx]Ga[sub1-x]As-GaAs quantum well lasers using silicon-induced layer disordering. Significance of impurity-induced layer disordering; Impurity redistribution in a QWH; Description of...

  • On the Internal Quantum Efficiency and Carrier Ejection in InGaAsP/InP-based Quantum-Well Lasers. Leshko, A. Yu.; Lyutetskii, A. V.; Pikhtin, N. A.; Skrynnikov, G. V.; Sokolova, Z. N.; Tarasov, I. S.; Fetisova, N. V. // Semiconductors;Dec2000, Vol. 34 Issue 12, p1397 

    The optimization of InGaAsP/InP quantum-well laser heterostructures that had various configurations and emitted in the wavelength range from 1.26 up to 1.55 �m was carried out with the aim of maximizing the internal quantum efficiency and output optical power. It was experimentally shown...

  • Interface flattening and optical characteristics of GaAs/Al[sub 0.3]Ga[sub 0.7]As quantum wells grown on finite patterns on a GaAs(111)B substrate. Nishida, Toshio; Kobayashi, Naoki // Applied Physics Letters;6/1/1998, Vol. 72 Issue 22 

    The formation of an atomically flat quantum well is studied by using metalorganic vapor phase epitaxy on a GaAs(111)B substrate. The surface of a 1-nm-thick GaAs layer on Al[sub 0.3]Ga[sub 0.7]As, corresponding to the upper interface of a quantum well, becomes stepfree on a 3.5-μm-wide mesa,...

  • InAs[sub 1-x]Sb[sub x]/In[sub 1-y]Ga[sub y]As multiple-quantum-well heterostructure design for.... Liau, Z.L.; Choi, H.K. // Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3219 

    Examines the strained-layer InAs[sub 1-x]Sb[sub x]/In[sub 1-y]Ga[sub y]As multiple-quantum-well (MQW) heterostructure design for laser improvement. Implication of well and barrier compositions for MQW crystal growth; Effect of compressive strain on MQW heterostructure; Relationship between hole...

  • Temperature dependence of continuous wave threshold current for 2.3-2.6 mum InGaAsSb/AlGaAsSb... Garbuzov, D.; Maiorov, M.; Lee, H.; Khalfin, V.; Martinelli, R.; Connolly, J. // Applied Physics Letters;5/17/1999, Vol. 74 Issue 20, p2990 

    Examines the dependence of spontaneous emission intensity on both current and temperature for InGaAsSb/AlGaAsSb separate-confinement-heterostructure quantum well diode lasers operating in the continuous wave and pulsed regimes. Temperature dependence of the nonradiative recombination processes;...

  • Very low threshold single quantum well graded-index separate confinement heterostructure... Tsang, W.T.; Choa, F.S.; Wu, M.C.; Chen, Y.K.; Sergent, A.M.; Sciortino Jr., P.F. // Applied Physics Letters;6/10/1991, Vol. 58 Issue 23, p2610 

    Reports that single quantum well graded-index separate confinement heterostructure InGaAs/InGaAsP lasers were grown by chemical beam epitaxy. Threshold current density of the lasers; Internal quantum efficiency and internal waveguide loss.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics