TITLE

Solid phase epitaxy and doping of Si through Sb-enhanced recrystallization of polycrystalline Si

AUTHOR(S)
Gong, S. F.; Hentzell, H. T. G.; Radnoczi, G.; Charai, A.
PUB. DATE
September 1988
SOURCE
Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated a Sb-enhanced solid phase epitaxy of Si on a p-type (100)Si substrate through intermixing of amorphous Si and Sb thin films and a subsequent recrystallization of the polycrystalline Si (poly-Si). By using cross-sectional transmission electron microscopy, we show that a high concentration of Sb enhances recrystallization of poly-Si, which eventually results in an epitaxial growth of Si. This is most likely due to an enhanced Si self-mobility caused by a Sb diffusion in the vicinity of the grain boundaries of the poly-Si. At the same time the doped layer was observed to serve as a diffusion source for doping the Si substrate. Secondary ion mass spectrometry measurements reveal the concentrations and the depth profiles of Sb in the Si substrate.
ACCESSION #
9827922

 

Related Articles

  • <100> and <111> textures in unseeded, strip heater recrystallized silicon-on-insulator. Lee, El Hang // Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p180 

    The graphite strip heater technique was used to obtain strongly preferred <100> or <111> textures for thin-film silicon recrystallized on amorphous oxide and nitride substrates. Whereas <100> textures have been obtained in the liquid phase, <111> textures have been obtained in the solid phase at...

  • Sb/GaSb heterostructures and multilayers. Golding, T.D.; Dura, J.A.; Wang, W.C.; Vigilante, A.; Moss, S.C.; Chen, H.C.; Miller Jr., J.H.; Hoffman, C.A.; Meyer, J.R. // Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1098 

    Describes the epitaxial growth of antimony (Sb) films on gallium antimonide (GaAs) substrates. Influence of a confinement-induced positive energy gap on nonlinear optical switches; Exploitation of the long mean free path in Sb for quantum transport evaluation; Application of Sb/GaAs system to...

  • X-ray spectroscopic examination of thin HfO2 films ALD- and MOCVD-grown on the Si(100) surface. Sokolov, A. A.; Ovchinnikov, A. A.; Lysenkov, K. M.; Marchenko, D. E.; Filatova, E. O. // Technical Physics;Jul2010, Vol. 55 Issue 7, p1045 

    HfO2 films 5 nm thick grown on Si(100) substrates by the methods of MOCVD hydride epitaxy and atomic layer deposition (ALD) are studied using X-ray photoelectron spectroscopy combined with Ar+ ion etching and X-ray reflectometry. It is found that (i) the ALD-grown HfO2 films are amorphous, while...

  • Heteroepitaxial structures of SrTiO3/TiN on Si(100) by in situ pulsed laser deposition. Vispute, R. D.; Narayan, J.; Dovidenko, K.; Jagannadham, K.; Parikh, N.; Suvkhanov, A.; Budai, J. D. // Journal of Applied Physics;12/15/1996, Vol. 80 Issue 12, p6720 

    Examines the dependence of substrate temperature and oxygen partial pressure on the crystalline quality of the SrTiO[sub3] (STO) films on silicon (Si) with epitaxial TiN template. Significance of the epitaxial growth of STO on metallic TiN; Advantages of epitaxial TiN; Analysis of the surface...

  • Investigation of mechanisms of vacancy generation in silicon in the... Helmer, S.B.; Jones, K.S. // Journal of Applied Physics;7/15/1997, Vol. 82 Issue 2, p583 

    Studies the perturbance in silicon vacancy concentration induced by the presence of TiSi2 films. Use of antimony in silicon doping as vacancy detector; Stress compensation mechanism; Volume contraction mechanism.

  • Epitaxial integration of single crystal C[sub 60]. Dura, J.A.; Pippenger, P.M. // Applied Physics Letters;12/20/1993, Vol. 63 Issue 25, p3443 

    Examines the growth of a single crystal thin films of (111) oriented buckminsterfullerene (C[sub 60]) on epitaxial layers of single crystal antimony [Sb]. Properties of C[sub 60]; Confirmation of C[sub 60]/Sb epitaxy by low-energy electron diffraction; Results of the X-ray diffraction analysis.

  • New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment. Kukushkin, S. A.; Osipov, A. V. // Physics of the Solid State;Jul2008, Vol. 50 Issue 7, p1238 

    A new method of solid-state epitaxy of silicon carbide (SiC) on silicon (Si) is proposed theoretically and realized experimentally. Films of various polytypes of SiC on Si(111) grow through a chemical reaction (at T = 1100–1400°C) between single-crystal silicon and gaseous carbon oxide...

  • Pulsed laser assisted epitaxy of Ge[sub x]Si[sub 1-x] alloys on Si <100>. Lombardo, S.; Kramer, K.; Thompson, Michael O.; Smith, Duane R. // Applied Physics Letters;12/23/1991, Vol. 59 Issue 26, p3455 

    Investigates the epitaxial quality of Ge[sub x]Si[sub 1-x] films grown on silicon <100> by laser-assisted technique. Performance of in situ cleaning; Sufficiency of the energy density to melt the layer of the underlying single crystal; Reduction of laser energy density.

  • Electrical and structural characterization of ultrathin epitaxial CoSi2 on Si(111). Phillips, Julia M.; Batstone, J. L.; Hensel, J. C.; Cerullo, M. // Applied Physics Letters;12/7/1987, Vol. 51 Issue 23, p1895 

    We report the fabrication of epitaxial CoSi2 layers on Si(111) as thin as 1 nm. The crystalline lattice of these layers is coherent with the Si lattice, and the silicide is electrically continuous. There are pronounced structural differences between films which are less than 3 nm thick and those...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics