Solid phase epitaxy and doping of Si through Sb-enhanced recrystallization of polycrystalline Si

Gong, S. F.; Hentzell, H. T. G.; Radnoczi, G.; Charai, A.
September 1988
Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p902
Academic Journal
We have investigated a Sb-enhanced solid phase epitaxy of Si on a p-type (100)Si substrate through intermixing of amorphous Si and Sb thin films and a subsequent recrystallization of the polycrystalline Si (poly-Si). By using cross-sectional transmission electron microscopy, we show that a high concentration of Sb enhances recrystallization of poly-Si, which eventually results in an epitaxial growth of Si. This is most likely due to an enhanced Si self-mobility caused by a Sb diffusion in the vicinity of the grain boundaries of the poly-Si. At the same time the doped layer was observed to serve as a diffusion source for doping the Si substrate. Secondary ion mass spectrometry measurements reveal the concentrations and the depth profiles of Sb in the Si substrate.


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