TITLE

Effect of processing on the structure of the Si/SiO2 interface

AUTHOR(S)
Ourmazd, A.; Rentschler, J. A.; Bevk, J.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/29/1988, Vol. 53 Issue 9, p743
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Starting from atomically smooth and characterized (100)Si/SiO2 interfaces, we use lattice imaging techniques to investigate the effect of annealing temperature and processing steps on the interfacial structure. Our results show that a c-SiO2 layer is present under all conditions we have investigated.
ACCESSION #
9827907

 

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