Effect of processing on the structure of the Si/SiO2 interface

Ourmazd, A.; Rentschler, J. A.; Bevk, J.
August 1988
Applied Physics Letters;8/29/1988, Vol. 53 Issue 9, p743
Academic Journal
Starting from atomically smooth and characterized (100)Si/SiO2 interfaces, we use lattice imaging techniques to investigate the effect of annealing temperature and processing steps on the interfacial structure. Our results show that a c-SiO2 layer is present under all conditions we have investigated.


Related Articles

  • New method for separating and characterizing interface states and oxide traps on oxidized silicon. Sah, Chih-Tang; Lin, Wallace Wan-Li; Pan, Samuel Cheng-Sheng; Hsu, Charles Ching-Hsiang // Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p782 

    The generation-annealing kinetics of interface and oxide traps are separated using a new time-dependent high-frequency capacitance-voltage technique based on the independence of the trapped oxide charge density on the silicon surface energy band bending or surface potential. An application...

  • Electron accumulation layer at n-Si/non-liquid electrolyte interfaces. Benisty, H.; Colomban, Ph.; Chazalviel, J.-N. // Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1121 

    n-Si/non-liquid electrolyte interfaces have been realized in order to obtain electron accumulation layers of very high concentration at various temperatures. The interface has been characterized by using standard electrochemical measurements and the two-dimensional electron gas has been studied...

  • Interface charge control of directly bonded silicon structures. Bengtsson, Stefan; Engström, Olof // Journal of Applied Physics;8/1/1989, Vol. 66 Issue 3, p1231 

    Presents a study which investigated the influence of interface states and charges on the properties of silicon/silicon and silicon/SiO[sub2] interfaces prepared by water bonding. Theoretical description of the bounded interface; Results and discussion; Conclusion.

  • Streaming and removal forces due to second-order sound field during megasonic cleaning of silicon wafers. Deymier, P. A.; Vasseur, J. O.; Khelif, A.; Djafari-Rouhani, B.; Dobrzynski, L.; Raghavan, S. // Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6821 

    We calculate the second-order streaming force in a fluid in the vicinity of the solid/fluid interface for two systems of importance in the technology of megasonic cleaning of silicon wafers. The first system consists of a single planar interface between a solid elastic medium representing...

  • In situ investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces. Drevillon, B.; Kumar, Satyendra; Roca i Cabarrocas, P.; Siefert, J. M. // Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2088 

    Transparent conducting oxide (TCO)/hydrogenated amorphous silicon (a-Si:H) interfaces are investigated combining kinetic ellipsometry and Kelvin probe measurements. It is shown that the correlation between both in situ techniques allows a detailed description of the optoelectronic behavior of...

  • Comment on: 'Random telegraph signals arising from fast interface states in.... Uren, M.J.; Ming-Horn Tsai // Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1443 

    Comments on the mensuration of random telegraph signals (RTS) from fast silicon-silicon oxide interface states from slow states. Use of high sampling rates; Features of RTS published earlier; Description of interface states with common chemical nature and environment.

  • Shallow electron traps at the 4H-SiC/SiO[sub 2] interface. Afanas'ev, V. V.; Stesmans, A.; Bassler, M.; Pensl, G.; Schulz, M. J. // Applied Physics Letters;1/17/2000, Vol. 76 Issue 3 

    Low-temperature electrical measurements and photon-stimulated electron tunneling experiments reveal the presence of a high density of interface states at around 0.1 eV below the conduction band of 4H-SiC at its interface with thermally grown SiO[sub 2]. These states, related to defects in the...

  • Measurement of interface trap states in metal–ferroelectric–silicon heterostructures. Alexe, Marin // Applied Physics Letters;5/4/1998, Vol. 72 Issue 18 

    Interface trap density distributions within Si for metal–bismuth titanate–silicon capacitors fabricated by chemical solution deposition were investigated. The interface trap density was measured by a conductance technique at room temperature and a value in the order of 10[sup...

  • Native oxidation of the Si(001) surface: Evidence 1or an interfacial phase. Renaud, G.; Fuoss, P.H.; Ourmazd, A.; Bevk, J.; Freer, B.S. // Applied Physics Letters;3/11/1991, Vol. 58 Issue 10, p1043 

    Studies the structure of the silicon-silicon dioxide interface, obtained by native oxidation of a silicon(001) surface. X-ray diffraction patterns; Interfacial phase coherent with the silicon substrate; Phase disorder at the atomic scale; Dependence of extent and perfection on the flatness of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics