TITLE

Low-temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition

AUTHOR(S)
Chen, J. C.; Bush, P.; Chen, W. K.; Liu, Pao-Lo
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/29/1988, Vol. 53 Issue 9, p773
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the low-temperature metalorganic chemical vapor deposition of InSb on (001)CdTe. This low-temperature process was carried out by a precracking technique. Epitaxial growth with a substrate temperature as low as 185 °C can be obtained using a simple two-stage heater. The deposited films were examined by double-crystal x-ray diffraction, scanning electron microscope, and energy dispersive analysis of x ray. The films grown at 240 °C are stoichiometric, single crystal, and of specular surface morphology.
ACCESSION #
9827892

 

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