Temperature dependence of Hall effect in arsenic-doped silicon at intermediate dopant density

Lin, Alice L.
August 1988
Applied Physics Letters;8/29/1988, Vol. 53 Issue 9, p776
Academic Journal
Temperature dependence of Hall effect in arsenic-doped silicon at intermediate dopant concentrations from 1.8×1017 to 2.5×1018 cm-3 and low compensation is investigated. Activation energies of As in Si from experimental results are compared to calculated values available in literature for arsenic concentrations up to 1×1018 cm-3 . A critical dopant density (∼5×1017 cm-3 ) is found, below which calculated results agree well with experimental results and above which the calculated values exceed experimentally determined energies. The discrepancy increases with increasing dopant density. The phenomenon is explained by the delocalization of D- states and the broadening of the D- band, which are also evident from the experimental Hall mobility results.


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