Strain-induced lateral confinement of excitons in GaAs-AlGaAs quantum well microstructures

Kash, K.; Worlock, J. M.; Sturge, M. D.; Grabbe, P.; Harbison, J. P.; Scherer, A.; Lin, P. S. D.
August 1988
Applied Physics Letters;8/29/1988, Vol. 53 Issue 9, p782
Academic Journal
We report evidence for lateral confinement of excitons within a continuous two-dimensional GaAs-AlGaAs quantum well. The confinement to ‘‘wires’’ within the well was produced by partially etching a pattern through the upper AlGaAs barrier. We propose a new mechanism, that of patterned strain, for lateral quantum confinement of carriers in semiconductor microstructures, to explain our results.


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