Theoretical investigation of hole transport in strained III-V semiconductors: Application to GaAs

Hinckley, J. M.; Singh, J.
August 1988
Applied Physics Letters;8/29/1988, Vol. 53 Issue 9, p785
Academic Journal
A Monte Carlo method has been developed and applied to study the anisotropic transport of holes in unstrained and strained bulk III-V compound semiconductors. In this letter, we present the results for the prototypical GaAs, T=300 K material system. We find that the hole mobility can be significantly increased by the presence of biaxial compressive strain in the system. This arises from strain-induced modifications in the densities of states and the overlap functions and from a separation of the heavy and light hole bands at k=0 which decreases the heavy to light hole interband scattering. For a 1.5% biaxial compressive strain, the hole mobilities are increased by up to a factor of 2 over the unstrained values. This improvement is sustained up to the highest field in our simulations which was 20 kV/cm.


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