Realization of a quasi-three-dimensional modulation-doped semiconductor structure

Shayegan, M.; Sajoto, T.; Santos, M.; Silvestre, C.
August 1988
Applied Physics Letters;8/29/1988, Vol. 53 Issue 9, p791
Academic Journal
We report the realization of a modulation-doped quasi-three-dimensional electron system. The structure consists of a 2000-Å-wide undoped AlxGa1-xAs well bounded by undoped (spacer) and doped layers of AlyGa1-yAs (y>x) on both sides. The alloy composition in the well (x) is varied quadratically so that the combined potentials due to the AlxGa1-xAs and the electric charge in the well produce a square potential well with a nearly uniform carrier density. Magnetotransport data reveal that the system contains [bar_over_tilde:_approx._equal_to]2.5×1011 cm-2 electrons, which occupy four electric subbands and have a low-temperature mobility in excess of 1×105 cm2/V s indicating the high quality of the structure.


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