Physical origin of the DX center

Bourgoin, J. C.; Mauger, A.
August 1988
Applied Physics Letters;8/29/1988, Vol. 53 Issue 9, p749
Academic Journal
When intervalley mixing effects are large enough, they induce a sharp shallow deep instability for a substitutional impurity. We show that this is the case in GaAs for the ground state associated with the L valleys, which becomes located in the forbidden gap under hydrostatic pressure or in GaAlAs alloys, whereas the donor states associated to the Γ and X valleys remain shallow. This result accounts for the behavior of the so-called DX center.


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