TITLE

Physical origin of the DX center

AUTHOR(S)
Bourgoin, J. C.; Mauger, A.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/29/1988, Vol. 53 Issue 9, p749
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
When intervalley mixing effects are large enough, they induce a sharp shallow deep instability for a substitutional impurity. We show that this is the case in GaAs for the ground state associated with the L valleys, which becomes located in the forbidden gap under hydrostatic pressure or in GaAlAs alloys, whereas the donor states associated to the Γ and X valleys remain shallow. This result accounts for the behavior of the so-called DX center.
ACCESSION #
9827855

 

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