TITLE

Deep trench structures in silicon for sensitivity enhancement of Si/SiO2 interface studies

AUTHOR(S)
Stathis, J. H.; Bassous, E.; Scott, B. A.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/29/1988, Vol. 53 Issue 9, p794
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The measurement of defects at the silicon-insulator interface by most spectroscopic techniques is difficult because of their low concentration. A novel structure has been fabricated by etching a dense array of deep trenches through a silicon wafer. All the sidewalls in this structure are {111} surfaces, and the surface area is greatly enhanced compared to that of a polished wafer of equivalent size. We have grown an oxide on this structure and have achieved better than an order of magnitude increase in the sensitivity of electron paramagnetic resonance measurements of Pb defects at the SiO2-Si(111) interface.
ACCESSION #
9827848

 

Related Articles

  • Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature. Sheoran, Manav; Dong Seop Kim; Rohatgi, Ajeet; Dekkers, H. F. W.; Beaucarne, G.; Young, Matthew; Asher, Sally // Applied Physics Letters;4/28/2008, Vol. 92 Issue 17, p172107 

    The stable hydrogen isotope deuterium (D), which is released during the annealing of deuterated silicon nitride films, diffuses through the crystalline silicon and is captured by a thin, amorphous layer of silicon sputtered on the rear surface. We report on the measurement of the concentration...

  • Thinning of silicon-on-insulator wafers by numerically controlled plasma chemical vaporization machining. Mori, Yuzo; Yamamura, Kazuya; Sano, Yasuhisa // Review of Scientific Instruments;Apr2004, Vol. 75 Issue 4, p942 

    Silicon-on-insulator (SOI) wafers are semiconductor substrates that can be used in next-generation high-speed and low-power devices. An ultrathin SOI wafer with a SOI layer of less than 20 nm is required for the dynamic random access memory half-pitch node of 100 nm or lower. In this report, the...

  • Crystalline quality of bonded silicon-on-insulator characterized by spectroscopic ellipsometry and Raman spectroscopy. Nguyen, N. V.; Maslar, J. E.; Kim, Jin-Yong; Han, Jin-Ping; Park, Jin-Won; Chandler-Horowitz, D.; Vogel, E. M. // Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2765 

    The crystalline quality of silicon-on-insulator fabricated by a wafer bonding technique was examined by spectroscopic ellipsometry and Raman spectroscopy. The detailed modeling of the experimental ellipsometric data yields information about structural defects in the silicon-on-insulator layer....

  • Scattering loss in silicon-on-insulator rib waveguides fabricated by inductively coupled plasma reactive ion etching. Yongjin Wang; Zhilang Lin; Xinli Cheng; Changsheng Zhang; Fan Gao; Feng Zhang // Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p3995 

    Inductively coupled plasma reactive ion etching (ICPRIE) was used to etch rib the waveguide and U groove to achieve the integration of self-alignment connection between single mode fiber and rib waveguide in silicon-on-insulator (SOI) wafer. Interface roughness is one of the consequences of an...

  • Single-crystalline (100) Ge networks on insulators by rapid-melting growth along hexagonal mesh-pattern. Toko, Kaoru; Ohta, Yasuharu; Sakane, Takashi; Sadoh, Taizoh; Mizushima, Ichiro; Miyao, Masanobu // Applied Physics Letters;1/24/2011, Vol. 98 Issue 4, p042101 

    Single-crystalline-Ge (c-Ge) networks on insulator films formed on Si substrates are essential for integrating high-speed and multifunctional devices onto the Si-platform. Rapid-melting-growth of mesh-patterned amorphous-Ge is examined over large areas (500×250 μm2). For...

  • Seebeck Coefficient of Ge-on-Insulator Layers Fabricated by Direct Wafer Bonding Process. Veerappan Manimuthu; Shoma Yoshida; Yuhei Suzuki; Faiz Salleh; Mukannan Arivanandhan; Yoshinari Kamakura; Yasuhiro Hayakawa; Hiroya Ikeda // Advanced Materials Research;2015, Vol. 1117, p94 

    We investigate thermoelectric characteristics of SiGe nanostructures for realizing highsensitive infrared photodetector applications. In this paper, for future Ge and SiGe nanowires, we fabricate p-type Ge-on-insulator (GOI) substrates by a direct wafer bonding process. We discuss the annealing...

  • Fabrication of discrete p-n junctions separated by an insulating layer using direct wafer bonding. Guk, E. G.; Podlaskin, B. G.; Tokranova, N. A.; Voronkov, V. B.; Kozlov, V. A. // Semiconductors;Jul99, Vol. 33 Issue 7, p807 

    Three types of fabrication cycle based on the use of direct wafer bonding are developed for making pairs of discrete p-n-junctions separated by an insulating layer. The forward and reverse branches of the I-V characteristics of the resulting diodes are investigated. For all three fabrication...

  • H-induced platelet and crack formation in hydrogenated epitaxial Si/Si0.98B0.02/Si structures. Lin Shao; Yuan Lin; Swadener, J. G.; Lee, J. K.; Jia, Q. X.; Wang, Y. Q.; Nastasi, M.; Thompson, Phillip E.; Theodore, N. David; Alford, T. L.; Mayer, J. W.; Peng Chen; Lau, S. S. // Applied Physics Letters;1/9/2006, Vol. 88 Issue 2, p021901 

    An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxial Si/Si0.98B0.02/Si structures grown by molecular-beam epitaxy. H-related defect formation...

  • Optical characterisation of silicon nitride thin films grown by novel remote plasma sputter deposition. Claudio, Gianfranco; Calnan, Sonya; Bass, Kevin; Boreland, Matt // Journal of Materials Science: Materials in Electronics;Oct2008 Supplement 1, Vol. 19, p285 

    Silicon nitride (SiN x ) thin films have been deposited by a new remote plasma deposition system HiTUS (High Target Utilisation Sputtering). The remote plasma geometry allows, pseudo separation of plasma/target-bias parameters, lower ion bombardment, and effectively eliminates poisoning, making...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics