Impurity-induced-disordered phase modulators in AlGaAs/GaAs quantum well and double-heterostructure waveguides

Hausken, T.; Huang, T. C.; Lee, K. W.; Simes, R. J.; Dagli, N.; Coldren, L. A.
August 1988
Applied Physics Letters;8/29/1988, Vol. 53 Issue 9, p728
Academic Journal
Results for two new channel waveguide phase modulators formed by impurity-induced disordering (IID) with Zn diffusion in AlGaAs/GaAs are presented. One device utilizes side diffusion into ridges of single quantum well material and the other utilizes surface diffusion into double-heterostructure material. Waveguide loss for both TE and TM polarizations, and effective index steps calculated from observed mode profiles are reported. TE/TM mode conversion was observed without bias under certain conditions. Initial results for phase modulation are in agreement with expectations and appear not to be affected by the IID.


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