Intensity-dependent photoluminescence spectra of semiconductor-doped glasses

Zheng, J. P.; Shi, L.; Choa, F. S.; Liu, P. L.; Kwok, H. S.
August 1988
Applied Physics Letters;8/22/1988, Vol. 53 Issue 8, p643
Academic Journal
The photoluminescence spectra of CdSx Se1-x doped glasses were found to be strongly dependent on the pumping laser intensity. Two spectral features corresponding to two different recombination mechanisms were identified. The dynamic behavior can be explained by the competition between tunneling-mediated recombination of deeply trapped charges and direct recombination of excitons, free and shallowly trapped carriers, and nonradiative recombination. Large (>30 nm) blue shifts of both peaks were also observed as a function of the laser intensity.


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