TITLE

Intensity-dependent photoluminescence spectra of semiconductor-doped glasses

AUTHOR(S)
Zheng, J. P.; Shi, L.; Choa, F. S.; Liu, P. L.; Kwok, H. S.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/22/1988, Vol. 53 Issue 8, p643
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The photoluminescence spectra of CdSx Se1-x doped glasses were found to be strongly dependent on the pumping laser intensity. Two spectral features corresponding to two different recombination mechanisms were identified. The dynamic behavior can be explained by the competition between tunneling-mediated recombination of deeply trapped charges and direct recombination of excitons, free and shallowly trapped carriers, and nonradiative recombination. Large (>30 nm) blue shifts of both peaks were also observed as a function of the laser intensity.
ACCESSION #
9827840

 

Related Articles

  • Enhanced quantum-well photoluminescence in InGaAs/InGaAsP heterostructures following excimer-laser-assisted surface processing. Dubowski, J.J.; Poole, P.J.; Sproule, G.I.; Marshall, G.; Moisa, S.; Lacelle, C.; Buchanan, M. // Applied Physics A: Materials Science & Processing;1999, Vol. 69 Issue 7, pS299 

    Abstract. The influence of excimer-laser-assisted surface processing on quantum-well photoluminescence (QW PL) has been investigated in InGaAs/InGaAsP heterostructures capped with a thin layer of In[sub 0.53]Ga[sub 0.47]As. The PL mapping measurements carried out on samples before they were...

  • PHOTOLUMINESCENCE OF ZnO NANOSTRUCTURE FORMED BY LASER RADIATION. Medvid, A.; Mezinskis, G.; Grigorjeva, L.; Onufrijevs, P.; Andersone, D. // International Conference: Radiation Interaction with Material & ;2008, p58 

    The possibility of formation of ZnO nanostructures in polyvinylalcohol matrix by powerful laser radiation is studied in this work.

  • Influence of temperature and photoexcitation density on the quantum efficiency of defect emission in ZnO powders. Foreman, J. V.; Everitt, H. O.; Yang, J.; Liu, J. // Applied Physics Letters;7/2/2007, Vol. 91 Issue 1, p011902 

    The effect of laser excitation power density on the efficiency of intrinsic defect emission in ZnO powders was characterized by varying the laser irradiance over three orders of magnitude and monitoring changes in the samples’ photoluminescence. The external quantum efficiency of the...

  • Photoluminescence and resonant Raman scattering in highly conductive ZnO layers. Zalamai, V.V.; Ursaki, V.V.; Rusu, E.V.; Arabadji, P.; Tiginyanu, I.M.; Sirbu, L. // Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5168 

    Photoluminescence (PL) and resonant Raman scattering (RRS) excited by the 351.1 nm line of an Ar+ laser were studied in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound on porous InP substrates. The emission spectra consist of multiphonon RRS...

  • 1.3 to 1.5 μm light emission from InGaAs/GaAs quantum wells. Wang, S. M.; Zhao, Q. X.; Wang, X. D.; Wei, Y. Q.; Sadeghi, M.; Larsson, A. // Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p875 

    We propose using dipole δ-doping across highly strained InGaAs/GaAs quantum wells (QWs) to achieve light emission at wavelengths in the range of 1.3–1.55 μm. For In0.3Ga0.7As/GaAs single QWs, we demonstrate that the photoluminescence (PL) wavelength increases with the doping...

  • Surface recombination and facet heating in high-power diode lasers. Ziegler, Mathias; Talalaev, Vadim; Tomm, Jens W.; Elsaesser, Thomas; Ressel, Peter; Sumpf, Bernd; Erbert, Götz // Applied Physics Letters;5/19/2008, Vol. 92 Issue 20, p203506 

    Surface recombination velocities and surface temperatures at front facets of standard broad-area lasers emitting at 808 nm were investigated by time-resolved two-color photoluminescence and micro-Raman spectroscopy. Surface recombination velocities in the range between <105 and 106 cm/s are...

  • Photoluminescence of the space charge region of metal–zinc selenide contacts. Makhniı, V. P.; Sletov, M. M. // Semiconductors;Oct98, Vol. 32 Issue 10, p1080 

    The results of a study of photoluminescence excited by a nitrogen laser in the space charge region of Ni-ZnSe contacts are presented. It is found that the photoluminescence intensity is modulated not only in the presence of an external voltage but also in its absence, and that it depends on the...

  • Temperature profile of GaInAs/AlInAs/InP quantum cascade-laser facets measured by microprobe photoluminescence. Spagnolo, Vincenzo; Troccoli, Mariano; Scamarcio, Gaetano; Gmachl, Claire; Capasso, Federico; Tredicucci, Alessandro; Sergent, A. Michael; Hutchinson, Albert L.; Sivco, Deborah L.; Cho, Alfred Y. // Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2095 

    The local temperature of quantum-cascade lasers operating in continuous wave mode is reported. This information is extracted from the thermal shift of the band-to-band photoluminescence peaks in the AlInAs and InP cladding layers of quantum-cascade laser facets using a high-resolution microprobe...

  • QUANTUM CONFINEMENT EFFECT IN SEMICONDUCTORS, QUASI QDs FORMED BY LASER RADIATION. Medvid, Artur; Dmitruk, Igor; Onufrijevs, Pavels; Grabovskis, Dainis; Pundyk, Iryna // International Conference: Radiation Interaction with Material & ;2006, p118 

    Nanohills on a surfaces of Ge, Si, GaAs single crystal were formed by YAG:Nd laser. The structure on a surface of Ge is characterized by patterns related to C6i, point group symmetry covering all the surface of the sample having translations symmetry. Photoluminescence (PL) from irradiated...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics