Epitaxy-substrate discrimination in the photoluminescence characterization of epitaxial Si

Steele, A. G.; Thewalt, M. L. W.; Huffman, J. E.
August 1988
Applied Physics Letters;8/22/1988, Vol. 53 Issue 8, p666
Academic Journal
We show that the difficulty in separating the epilayer and substrate contributions to the photoluminescence of epitaxial Si samples can be solved simply by growing test samples on a substrate which has no photoluminescence in the region of interest for impurity characterization. Lightly In-doped Si is shown to be an ideal substrate material for the characterization of epitaxial layers of ultrahigh-purity Si.


Related Articles

  • Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si. Itoh, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime; Misawa, Shunji; Yoshida, Sadafumi // Journal of Applied Physics;1/15/1995, Vol. 77 Issue 2, p837 

    Presents a study which examined the photoluminescence of radiation induced defects in cubic silicon carbide films epitaxially grown on silicon substrates. Experimental details; Results; Discussion.

  • Comment on 'Optical investigations of AlGaN on GaN epitaxial films' [Appl. Phys. Lett. 74, 2456... Bajaj, K.K.; Coli, G. // Applied Physics Letters;10/11/1999, Vol. 75 Issue 15, p2334 

    Comments on the study conducted by Steude et al and published in the 'Applied Physics Letters' on the optical properties of coherently strained Al[sub x]Ga[sub 1-x]N layers grown on GaN epitaxial films. Measurement of photoluminescence excitonic linewidth; Effects of the presence of random...

  • Time-resolved microphotoluminescence of epitaxial laterally overgrown GaN. Holst, J.; Kaschner, A. // Applied Physics Letters;12/6/1999, Vol. 75 Issue 23, p3647 

    Studies the time-resolved microphotoluminescence of epitaxial laterally overgrown GaN. Influence of the different lateral growth mechanisms on the peak position; Temporal behavior of transition lines.

  • Atomic Layer Epitaxial Growth of Gaas on Porous Silicon Substrate. Lajnef, Mohamed; Bardaoui, Afrah; Sagne, Isabelle; Chtouroua, Radwan; Ezzaouia, Hatem // American Journal of Applied Sciences;2008, Vol. 5 Issue 5, p605 

    GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is...

  • Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature. Gwo, S.; Wu, C.-L.; Shen, C.-H.; Chang, W.-H.; Hsu, T.M.; Wang, J.-S.; Hsu, J.-T. // Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3765 

    High-quality InN epitaxial films have been grown by nitrogen-plasma-assisted molecular-beam epitaxy on Si(111) substrates using a double-buffer technique. Growth of a (0001)-oriented single crystalline wurtzite-InN layer was confirmed by reflection high-energy electron diffraction, x-ray...

  • Photoluminescence of GaAs epitaxial layers on Si with growth assisted by electron-beam irradiation. Kim, D. Y.; Kang, T. W.; Leem, J. Y.; Kim, T. W. // Journal of Applied Physics;9/15/1993, Vol. 74 Issue 6, p4268 

    Presents a study that characterized gallium arsenide (GaAs) films grown on untilted silicon (Si) substrates and prepared by molecular-beam epitaxy by low-temperature photoluminescence (PL) spectroscopy. PL properties of the species after postgrowth treatment; Crystal quality and stress...

  • Photoluminescence studies of Si (100) doped with low-energy (≤1000 eV) As+ ions during molecular beam epitaxy. Noël, J.-P.; Greene, J. E.; Rowell, N. L.; Kechang, S.; Houghton, D. C. // Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1525 

    Low-temperature (4.2K) photoluminescence (PL) has been used to characterize Si(100) films doped with EAs =200, 500, and 1000 eV 75 As+ ions during growth by molecular beam epitaxy on n+ Sb-doped substrates at temperatures Ts between 500 and 800 °C. Sharp no-phonon, transverse-optical, and...

  • Spectra of Photoluminescence from Silicon Nanocrystals. Kaganovich, É. B.; Manoılov, É. G.; Basylyuk, I. R.; Svechnikov, S. V. // Semiconductors;Mar2003, Vol. 37 Issue 3, p336 

    The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie in the energy range 1.4-3.2 eV with a peak at 2.4-2.8 eV. At the longest...

  • Photoluminescence of a superficial Si nanolayer and an example of its use. Ley, M.; Svrcek, V.; Kuznicki, Z. T. // Applied Physics Letters;6/9/2003, Vol. 82 Issue 23, p4056 

    A characteristic photoluminescence of a superficial Si nanolayer realized by ion implantation has been observed. This effect, being totally independent of those shown recently for a nanoscale Si-layered system, is similar to that produced by Si nanocrystals (Si nc). To visualize the nature and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics