Epitaxy-substrate discrimination in the photoluminescence characterization of epitaxial Si

Steele, A. G.; Thewalt, M. L. W.; Huffman, J. E.
August 1988
Applied Physics Letters;8/22/1988, Vol. 53 Issue 8, p666
Academic Journal
We show that the difficulty in separating the epilayer and substrate contributions to the photoluminescence of epitaxial Si samples can be solved simply by growing test samples on a substrate which has no photoluminescence in the region of interest for impurity characterization. Lightly In-doped Si is shown to be an ideal substrate material for the characterization of epitaxial layers of ultrahigh-purity Si.


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