TITLE

Observation of free excitons in room-temperature photoluminescence of GaAs/AlGaAs single quantum wells

AUTHOR(S)
Fujiwara, K.; Tsukada, N.; Nakayama, T.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/22/1988, Vol. 53 Issue 8, p675
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Observation of free excitons is reported in room-temperature photoluminescence of nominally undoped GaAs/AlGaAs single quantum wells grown by molecular beam epitaxy. A comparative study with parallel-conduction photocurrent spectroscopy shows that a sharp luminescence peak with a linewidth of 14 meV observed for the 6.1-nm-wide well coincides within 2 meV with the n=1 heavy-hole free-exciton resonance line at excess carrier densities less than 1017 cm-3. Excitonic decay channels dominate the luminescence spectrum even at room temperature as a result of quantum confinement effects, although photogenerated carriers are also provided for photocurrents by exciton dissociations.
ACCESSION #
9827820

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics