TbOF complex centers in ZnS thin-film electroluminescent devices

Okamoto, Kenji; Yoshimi, Takuya; Miura, Shoshin
August 1988
Applied Physics Letters;8/22/1988, Vol. 53 Issue 8, p678
Academic Journal
The effect of oxygen doping in ZnS:TbF thin-film electroluminescent (EL) devices has been studied. We concluded that the TbOF complex center is more efficient than the TbF complex center in ZnS thin-film EL devices. The improvement is attributed to the decreased nonradiative emission process of Tb and/or enlarged lattice distortions which generate electron-hole pairs efficiently at the Tb excitation site.


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