TITLE

Growth and rapid thermal annealing of AlGaAs/InGaAs pseudomorphic modulation-doped structures

AUTHOR(S)
Kesan, V. P.; Dodabalapur, A.; Neikirk, D. P.; Streetman, B. G.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/22/1988, Vol. 53 Issue 8, p681
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have examined molecular beam epitaxial growth conditions required to obtain good surface morphology and excellent electrical properties from normal and inverted pseudomorphic Al0.15Ga0.85As/InyGa1-yAs (y=0.15–0.20) high electron mobility transistor (HEMT) structures. For the same spacer layer thickness, inverted pseudomorphic HEMT’s exhibit significantly higher sheet carrier concentrations than corresponding normal HEMT’s. In addition, we report the first study of the influence of rapid thermal annealing on the electrical properties of pseudomorphic HEMT’s, using both close-contact and arsenic overpressure annealing. An improvement in two-dimensional electron gas (2-DEG) mobility with increasing anneal temperatures that is consistent with reduction in strain in the InGaAs channel is observed. This study also shows that pseudomorphic HEMT’s exhibit excellent thermal stability with no degradation in the electrical characteristics of the device for anneal temperatures up to 800 °C.
ACCESSION #
9827815

 

Related Articles

  • Surface diffusion length of Ga adatoms on (111)B surfaces during molecular beam epitaxy. Nomura, Y.; Morishita, Y. // Applied Physics Letters;2/28/1994, Vol. 64 Issue 9, p1123 

    Measures the spatial variation of the growth rate on mesa-etched gallium arsenide (GaAs) (111)B surfaces during molecular beam epitaxy. Determination of surface diffusion length of Ga adatoms; Value of the diffusion length; Ways to measure the reflection high-energy electron diffraction intensity.

  • Initial stages of molecular-beam epitaxy growth of GaN on 6H-SiC(0001). Lu, J.; Haworth, L.; Westwood, D. I.; Macdonald, J. E. // Applied Physics Letters;2/19/2001, Vol. 78 Issue 8, p1080 

    We studied the atomic H etching of 6H-SiC substrates and the initial stages of GaN/6H-SiC molecular-beam epitaxy growth. Atomic H etched 6H-SiC(0001)[sub Si] and (0001¯)[sub C] surfaces show a (&sqrt3;x&sqrt3;)-R30° and a (1x1) reconstruction respectively, with 0.7±0.2 monolayers of...

  • Surface ordering of the molecular beam epitaxially grown GaAs(001)-2x4-As reconstruction. Junming Zhou; Qikun Xue; Chaya, Hideo; Hashizume, Tomihiro; Sakurai, Toshio // Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p583 

    Demonstrates the surface ordering of molecular beam epitaxially grown gallium arsenide(001)-2x4-arsenic reconstruction. Use of scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED); Mechanisms involved in the STM-RHEED correlation; Discrepancy in STM image...

  • Surface morphology and optical characterization of GaN grown on alpha-Al[sub 2]O[sub 3] (0001).... Yeadon, M.; Hamdani, F. // Applied Physics Letters;6/2/1997, Vol. 70 Issue 22, p3023 

    Examines wurtzitic gallium nitride (GaN) epilayers on sapphire substrates by radio-frequency (rf) atomic nitrogen plasma-assisted molecular beam epitaxy (MBE). Effect of in situ and ex situ annealing of low temperature-deposited buffer layers on GaN; Achievement of result using rf-MBE;...

  • Surface reconstruction phase diagram and growth on GaAs(111)B substrates by molecular beam epitaxy. Yang, K.; Schowalter, L.J. // Applied Physics Letters;4/13/1992, Vol. 60 Issue 15, p1851 

    Describes the surface reconstruction phases of gallium arsenide (111) B substrates grown by molecular beam epitaxy. Use of reflection high-energy electron diffraction pattern; Determination of equation for boundaries separating reconstruction phase zones; Dependence of surface morphology and...

  • Molecular-beam epitaxial growth of In[sub x]Al[sub 1-x]As on GaAs. Jen-Inn Chyi; Jia-Lin Shieh // Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p699 

    Investigates the surface reconstruction of indium aluminum arsenide on gallium arsenide during molecular-beam epitaxial growth. Similarity to the surface reconstruction of aluminum gallium arsenide alloy; Appearance of surfaces during the steady-state growth; Dependence of the residual strain...

  • Improved crystalline quality of AlAs[sub x]Sb[sub 1-x] grown on InAs by modulated.... Yong-Hang Zhang; Chow, David H. // Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3239 

    Examines the use of the novel modulated molecular beam epitaxy method for fabricating high-crystalline quality AlAs[sub 0.16]Sb[0.84] ordered alloys grown on indium arsenide. Control of average arsenic(As)/antimony (Sb) ratio by modulation of As[sub 2] and Sb[sub 2] beams; Surface morphology of...

  • Desorption of triethylgallium during metalorganic molecular beam epitaxial growth of GaAs. Uneta, M.; Watanabe, Y.; Ohmachi, Y. // Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2327 

    The desorption of triethylgallium (TEGa) adsorbed on As- and Ga-terminated surfaces during metalorganic molecular beam epitaxial (MOMBE) growth of GaAs is investigated by measuring the As flux dependence of the growth rate. The growth rate decreases with decreasing As flux in the substrate...

  • Air stabilized (001) p-type GaAs fabricated by molecular beam epitaxy with reduced surface state.... Yan, D.; Look, E. // Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p186 

    Investigates undoped/p-type gallium arsenide (GaAs) structures fabricated by molecular beam epitaxy with reduced surface state density. Rationale for the temperature dependence of the measured barrier height; Changes in the surface defect nature; Observation of Fermi level pinning at values...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics