Growth and rapid thermal annealing of AlGaAs/InGaAs pseudomorphic modulation-doped structures

Kesan, V. P.; Dodabalapur, A.; Neikirk, D. P.; Streetman, B. G.
August 1988
Applied Physics Letters;8/22/1988, Vol. 53 Issue 8, p681
Academic Journal
We have examined molecular beam epitaxial growth conditions required to obtain good surface morphology and excellent electrical properties from normal and inverted pseudomorphic Al0.15Ga0.85As/InyGa1-yAs (y=0.15–0.20) high electron mobility transistor (HEMT) structures. For the same spacer layer thickness, inverted pseudomorphic HEMT’s exhibit significantly higher sheet carrier concentrations than corresponding normal HEMT’s. In addition, we report the first study of the influence of rapid thermal annealing on the electrical properties of pseudomorphic HEMT’s, using both close-contact and arsenic overpressure annealing. An improvement in two-dimensional electron gas (2-DEG) mobility with increasing anneal temperatures that is consistent with reduction in strain in the InGaAs channel is observed. This study also shows that pseudomorphic HEMT’s exhibit excellent thermal stability with no degradation in the electrical characteristics of the device for anneal temperatures up to 800 °C.


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