TITLE

Synthesis of heteroepitaxial Si/CoSi2/Si structures by Co implantation into Si

AUTHOR(S)
van Ommen, A. H.; Ottenheim, J. J. M.; Theunissen, A. M. L.; Mouwen, A. G.
PUB. DATE
August 1988
SOURCE
Applied Physics Letters;8/22/1988, Vol. 53 Issue 8, p669
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Heteroepitaxial Si/CoSi2/Si structures have been formed in both (100) and (111)Si by high-dose implantation of Co. During the implantation, Co is incorporated in the Si lattice as CoSi2 with the same orientation as the Si substrate. Upon annealing the implanted Co distribution is transformed into an epitaxial Si/CoSi2/Si layered structure. Sputtering of Si during the implantation of Co was studied using an implanted Si3N4 marker layer. The Si/CoSi2/Si/Si3N4/Si multilayer structure that is formed in this way demonstrates the potential of the ion beam synthesis technique.
ACCESSION #
9827775

 

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