High quality ultrathin InAs/GaAs quantum wells grown by standard and low-temperature modulated-fluxes molecular beam epitaxy

Gerard, J. M.; Marzin, J. Y.
August 1988
Applied Physics Letters;8/15/1988, Vol. 53 Issue 7, p568
Academic Journal
We report on the optical study of ultrathin (1–3 monolayers) InAs quantum wells in GaAs. The samples have been grown either by standard molecular beam epitaxy (MBE) or low-temperature (350 °C) modulated-fluxes MBE. The latter technique enlarges the range of pseudomorphic deposition of strained InAs layers on GaAs. Both types of samples display sharp (down to 6 meV spectral width) and intense low-temperature excitonic photoluminescence, and a high in-plane homogeneity. Higher energy optical transitions have been observed in both absorption and photoluminescence excitation experiments, performed on multiple quantum well structures.


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